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NV24C02MUW3VLTBG

Onsemi

NV24C02MUW3VLTBG by Onsemi

NV24C02MUW3VLTBG by Onsemi is an EEPROM with 2Kx1 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers a memory density of 2048 bits. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,679 parts In-Stock

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1,679

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Vyrian

USA . 1,472 parts In-Stock

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1,472

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TANS Electronics

Latvia . 5,479 parts In-Stock

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5,479

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Problanco Electronics

Mexico . 3,828 parts In-Stock

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3,828

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 2,639 parts In-Stock

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2,639

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Corphita

USA . 1,549 parts In-Stock

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1,549

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Kulean Microsystems

USA . 1,487 parts In-Stock

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1,487

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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710

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Unlock the power of reliable data storage with the NV24C02MUW3VLTBG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality EEPROM products like this one, perfect for automotive applications. With a compact design and durable construction, this EEPROM offers customers unparalleled value and peace of mind. Trust in the longevity and performance of Onsemi's NV24C02MUW3VLTBG for all your memory storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM chip, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes it easier to integrate this EEPROM into various electronic devices and circuits.

Screening Level: AEC-Q100

This automotive-grade screening level ensures reliability and performance in automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise control and timing in data transfers, making it efficient for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is common in many electronic devices, making integration easier.

No. of Terminals: 8

Having 8 terminals provides flexibility in connections and compatibility with various systems.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This package style ensures efficient heat dissipation and a compact form factor, ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environmental conditions.

Organization: 2KX1

The organization of 2KX1 allows for efficient storage and retrieval of data in the EEPROM.

Minimum Operating Temperature: -40 °C

Being able to operate at low temperatures makes this EEPROM suitable for a wide range of environments.

I2C Control Byte: 1010DDDR

The I2C control byte format ensures compatibility and easy interfacing with I2C communication protocols.

Terminal Position: DUAL

Dual terminal positioning provides better stability and reliability in connections.

Write Protection: HARDWARE

Hardware write protection adds an extra layer of security to prevent unauthorized data modifications.

Maximum Seated Height: 0.55 mm

The low seated height allows for slim and compact designs in electronic devices.

Maximum Clock Frequency (fCLK): 1 MHz

A high clock frequency enables fast data transfer rates, making this EEPROM suitable for high-performance applications.

Width: 2 mm

The compact width makes this EEPROM easy to integrate into small electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage ensures compatibility with a wide range of power sources.

Length: 3 mm

The small length of the EEPROM contributes to its compact form factor and space-saving design.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature range makes this EEPROM suitable for use in vehicles and harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, making this EEPROM energy-efficient and durable.

Parallel or Serial: SERIAL

Serial communication allows for simpler data transfer and control, making this EEPROM easy to interface with other devices.

Terminal Form: NO LEAD

The no-lead terminal form enhances reliability and durability in connections.

Maximum Supply Current: 0.5 mA

Low supply current consumption makes this EEPROM energy-efficient and suitable for battery-powered devices.

No. of Words: 2048 words

With 2048 words of memory, this EEPROM offers sufficient storage capacity for data and program storage.

Minimum Data Retention Time: 100

The minimum data retention time of 100 years ensures data integrity and reliability over long periods.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for compact and space-efficient PCB layouts.

No. of Words Code: 2K

The 2K words code indicates the memory capacity of the EEPROM, allowing for easy identification and compatibility.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage ensures compatibility with a wide range of power sources and systems.

Endurance: 1000000 Write/Erase Cycles

High endurance rating of 1,000,000 write/erase cycles ensures long-term reliability and durability.

Serial Bus Type: I2C

The I2C serial bus type offers simple and efficient communication, making this EEPROM easy to interface with other I2C devices.

Maximum Write Cycle Time (tWC): 4 ms

Fast write cycle time of 4 ms allows for quick data storage and retrieval, improving overall system performance.

Memory Density: 2048 bit

With a memory density of 2048 bits, this EEPROM provides ample storage capacity for various applications.

Memory IC Type: EEPROM

Being an EEPROM (Electrically Erasable Programmable Read-Only Memory) allows for flexible data storage and retrieval.

Maximum Standby Current: 0.000002 Amp

Ultra-low standby current consumption ensures minimal power usage when the EEPROM is not actively writing or erasing data.

Technical Specifications

EEPROM NV24C02MUW3VLTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C02MUW3VLTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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