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NV24C04UVLT2G

Onsemi

NV24C04UVLT2G by Onsemi

NV24C04UVLT2G by Onsemi is an AEC-Q100 EEPROM with 512x8 organization, operating at 3.3V. It features I2C control byte 1010DDMR and offers 1MHz clock frequency. Ideal for automotive applications due to its small form factor, high endurance of 1M cycles, and wide temperature range from -40 °C to 125°C.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.380

100+ parts

$0.331

1k+ parts

$0.307

10k+ parts

$0.283

3,000

$0.380

$0.331

$0.307

$0.283

DigiKey

USA . 2,985 parts In-Stock

1+ parts

$0.380

100+ parts

$0.331

1k+ parts

$0.307

10k+ parts

$0.227

2,985

$0.380

$0.331

$0.307

$0.227

Flip Electronics (Authorized)

USA . 113,202 parts In-Stock

1+ parts

-

100+ parts

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113,202

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,288 parts In-Stock

1+ parts

$0.323

100+ parts

-

1k+ parts

-

10k+ parts

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1,288

$0.323

-

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Vyrian

USA . 1,987 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

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10k+ parts

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1,987

$0.340

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Flip Electronics

USA . 173,202 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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173,202

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 720 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

-

720

$0.120

-

-

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Corphita

USA . 68 parts In-Stock

1+ parts

$0.306

100+ parts

-

1k+ parts

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10k+ parts

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68

$0.306

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Corohmni

South Africa . 303 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

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10k+ parts

-

303

$0.340

-

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QUARKTWIN TECHNOLOGY LTD

USA . 11,043 parts In-Stock

1+ parts

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100+ parts

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11,043

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SupplyDigital Components

Austria . 6,694 parts In-Stock

1+ parts

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6,694

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Problanco Electronics

Mexico . 6,123 parts In-Stock

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6,123

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Kulean Microsystems

USA . 1,748 parts In-Stock

1+ parts

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100+ parts

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1,748

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TANS Electronics

Latvia . 901 parts In-Stock

1+ parts

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100+ parts

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901

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UHIMA Technologies

Türkiye . 681 parts In-Stock

1+ parts

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681

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Overview

Unlock the power of reliable data storage with the NV24C04UVLT2G EEPROM by Onsemi. Designed for automotive applications, this high-quality memory IC offers 4096 bits of memory density and 1000000 write/erase cycles for unmatched durability. With a compact design and a wide operating temperature range, this EEPROM is perfect for space-constrained environments where temperature fluctuations are common. Trust in Onsemi's expertise in semiconductor technology to deliver a solution that meets your data storage needs with precision and reliability. Elevate your automotive electronics with the NV24C04UVLT2G EEPROM today.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Provides durability and protection for the internal components, making the EEPROM suitable for harsh environments.

Nominal Supply Voltage / Vsup (V) 3.3

Operates efficiently at a common voltage level, ensuring compatibility with a wide range of systems.

Operating Mode SYNCHRONOUS

Enables synchronized communication with other system components, improving overall performance and reliability.

Memory Density 4096 bit

Offers ample storage capacity for data storage and retrieval, making it suitable for various applications.

Endurance 1000000 Write/Erase Cycles

Withstands a high number of write/erase cycles, ensuring long-term reliability and durability of the EEPROM.

Technical Specifications

EEPROM NV24C04UVLT2G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C04UVLT2G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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