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NV24C02MUW3VTBG

Onsemi

NV24C02MUW3VTBG by Onsemi

NV24C02MUW3VTBG by Onsemi is an AEC-Q100 EEPROM with 2KX1 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 2048-bit memory density. Ideal for automotive applications due to its -40 to 125 °C temperature range and high endurance of 1M cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,792 parts In-Stock

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Vyrian

USA . 674 parts In-Stock

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SupplyDigital Components

Austria . 8,357 parts In-Stock

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Problanco Electronics

Mexico . 7,459 parts In-Stock

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Kulean Microsystems

USA . 7,070 parts In-Stock

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TANS Electronics

Latvia . 4,102 parts In-Stock

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Corphita

USA . 1,364 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 373 parts In-Stock

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Overview

Unlock endless possibilities with the NV24C02MUW3VTBG EEPROM by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that meets the highest industry standards. This EEPROM is ideal for automotive applications, offering exceptional performance in a compact package. With a high endurance of 1,000,000 write/erase cycles, fast operating mode, and secure write protection, this EEPROM provides unmatched value and benefits to customers looking for a reliable memory solution. Upgrade your automotive electronics with the NV24C02MUW3VTBG and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making the product suitable for automotive applications where performance under harsh conditions is essential.

Operating Mode: SYNCHRONOUS

Synchronous operation enables precise timing and control, enhancing the overall performance of the product.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V provides a balance between power efficiency and performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, the product can withstand elevated temperatures without compromising functionality.

Organization: 2KX1

The 2KX1 organization optimizes memory storage and access, allowing for efficient data handling and retrieval.

Output Characteristics: OPEN-DRAIN

Open-drain output characteristics facilitate easy interfacing with other components, enhancing compatibility and flexibility.

Write Protection: HARDWARE

Hardware-based write protection ensures data security and integrity, preventing unauthorized modification or erasure.

Maximum Clock Frequency (fCLK): 0.4 MHz

With a maximum clock frequency of 0.4 MHz, the product supports fast data transfer rates and efficient operation.

Technical Specifications

EEPROM NV24C02MUW3VTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C02MUW3VTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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