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NV24C04MUW3VTBG

Onsemi

NV24C04MUW3VTBG by Onsemi

NV24C04MUW3VTBG by Onsemi is an AEC-Q100 EEPROM with 4Kx1 organization, operating at 3.3V. It features I2C control byte 1010DDMR, serial interface, and endurance of 1M cycles. Ideal for automotive applications requiring reliable non-volatile memory storage in a compact package.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,885 parts In-Stock

1+ parts

$0.480

100+ parts

-

1k+ parts

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10k+ parts

$0.244

2,885

$0.480

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$0.244

Flip Electronics (Authorized)

USA . 129,000 parts In-Stock

1+ parts

-

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129,000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,204 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

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10k+ parts

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1,204

$0.418

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Vyrian

USA . 1,492 parts In-Stock

1+ parts

$0.440

100+ parts

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10k+ parts

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1,492

$0.440

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Flip Electronics

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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129,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,385 parts In-Stock

1+ parts

$0.396

100+ parts

-

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10k+ parts

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1,385

$0.396

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Corohmni

South Africa . 394 parts In-Stock

1+ parts

$0.440

100+ parts

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394

$0.440

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Component Stockers USA

USA . 537 parts In-Stock

1+ parts

$99.990

100+ parts

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1k+ parts

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10k+ parts

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537

$99.990

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SupplyDigital Components

Austria . 7,921 parts In-Stock

1+ parts

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100+ parts

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7,921

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Kulean Microsystems

USA . 6,735 parts In-Stock

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6,735

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TANS Electronics

Latvia . 5,788 parts In-Stock

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5,788

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Problanco Electronics

Mexico . 575 parts In-Stock

1+ parts

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575

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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357

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Overview

Discover the NV24C04MUW3VTBG by Onsemi, a high-quality EEPROM that offers reliability and durability for various automotive applications. With its advanced technology and AEC-Q100 screening level, this product ensures optimal performance in extreme conditions. The small outline package and very thin profile make it easy to integrate into compact designs. Benefit from its 1000000 write/erase cycles, ensuring long-lasting data retention and security. Trust Onsemi's reputation for excellence in semiconductor manufacturing and unlock the potential of your automotive electronics with the NV24C04MUW3VTBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Screening Level: AEC-Q100

This automotive-grade qualification ensures high quality and reliability in automotive applications.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for automotive and industrial environments.

Organization: 4KX1

Offers a large capacity of 4K words, providing ample storage for data in various applications.

I2C Control Byte: 1010DDMR

Uses I2C communication protocol for easy interfacing with other devices, enhancing versatility.

Write Protection: HARDWARE

Ensures data integrity by allowing write protection, preventing unintended data modification.

Endurance: 1000000 Write/Erase Cycles

Withstands a high number of write/erase cycles, making it reliable for frequent data updates.

Serial Bus Type: I2C

Utilizes I2C serial bus for efficient data transfer, suitable for applications requiring serial communication.

Technical Specifications

EEPROM NV24C04MUW3VTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C04MUW3VTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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