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NV24C04DWVLT3G

Onsemi

NV24C04DWVLT3G by Onsemi

NV24C04DWVLT3G by Onsemi is an AEC-Q100 EEPROM with 512x8 organization, operating at 3.3V. It features I2C control byte 1010DDMR, endurance of 1M cycles, and operates in automotive temperature grade. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,666 parts In-Stock

1+ parts

$0.390

100+ parts

$0.341

1k+ parts

$0.317

10k+ parts

$0.223

8,666

$0.390

$0.341

$0.317

$0.223

DigiKey

USA . 1,882 parts In-Stock

1+ parts

$0.390

100+ parts

$0.341

1k+ parts

$0.316

10k+ parts

$0.234

1,882

$0.390

$0.341

$0.316

$0.234

Chip1Stop

Japan . 734 parts In-Stock

1+ parts

$2.390

100+ parts

$0.661

1k+ parts

$0.517

10k+ parts

-

734

$2.390

$0.661

$0.517

-

Verical

USA . 93,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.190

93,000

-

-

-

$0.190

Rochester

USA . 2,859 parts In-Stock

1+ parts

-

100+ parts

$0.256

1k+ parts

$0.212

10k+ parts

$0.189

2,859

-

$0.256

$0.212

$0.189

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 283 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

-

283

$0.199

-

-

-

Vyrian

USA . 635 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

635

$0.209

-

-

-

Flip Electronics

USA . 93,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93,000

-

-

-

-

Cyclops Electronics Ltd

UK . 654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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654

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 511 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

511

$0.130

-

-

-

Corphita

USA . 2,290 parts In-Stock

1+ parts

$0.188

100+ parts

-

1k+ parts

-

10k+ parts

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2,290

$0.188

-

-

-

Corohmni

South Africa . 117 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

117

$0.209

-

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Perfect Parts

USA . 8,714 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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8,714

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-

-

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Kulean Microsystems

USA . 8,325 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,325

-

-

-

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Problanco Electronics

Mexico . 3,662 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,662

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-

-

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GreenTree Electronics

Israel . 1,970 parts In-Stock

1+ parts

-

100+ parts

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1,970

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-

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SupplyDigital Components

Austria . 1,374 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,374

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TANS Electronics

Latvia . 667 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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667

-

-

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UHIMA Technologies

Türkiye . 441 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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441

-

-

-

-

Overview

Unlock the power of reliable data storage with the NV24C04DWVLT3G EEPROM by Onsemi. Designed with cutting-edge technology and built to AEC-Q100 standards, this small outline package offers 512x8 organization for seamless operation in automotive applications. With a wide operating temperature range and high endurance of 1,000,000 write/erase cycles, customers can trust in the durability and performance of this memory IC. Experience the value of secure data storage and efficient operation with the NV24C04DWVLT3G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the EEPROM lightweight and durable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and secure installation of the EEPROM on printed circuit boards, saving space and facilitating automated assembly processes.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that the EEPROM meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode offers efficient and synchronized data transfer, enhancing the overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of electronic systems and provides optimal power efficiency for the EEPROM.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, the EEPROM can withstand harsh environmental conditions, making it suitable for industrial and automotive applications.

Organization: 512X8

The organization of 512 words of 8 bits each provides sufficient memory capacity and data structure for storing and retrieving information efficiently.

Write Protection: HARDWARE

The hardware write protection feature ensures data security by preventing unauthorized write access to the EEPROM, enhancing data integrity and reliability.

Maximum Clock Frequency (fCLK): 1 MHz

The maximum clock frequency of 1 MHz enables high-speed data transfer and processing, enhancing the overall performance of the EEPROM in demanding applications.

Memory Density: 4096 bit

With a memory density of 4096 bits, the EEPROM can store a large amount of data in a compact form factor, making it ideal for applications requiring extensive memory capacity.

Technical Specifications

EEPROM NV24C04DWVLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C04DWVLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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