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NV24C02UVLT2G

Onsemi

NV24C02UVLT2G by Onsemi

NV24C02UVLT2G by Onsemi is an AEC-Q100 EEPROM with 2Kx1 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 2048-bit memory density. Ideal for automotive applications due to its small outline, thin profile, and high endurance of 1M write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,382 parts In-Stock

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2,382

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Vyrian

USA . 2,211 parts In-Stock

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2,211

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 175 parts In-Stock

1+ parts

$26.000

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175

$26.000

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TANS Electronics

Latvia . 3,477 parts In-Stock

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3,477

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Problanco Electronics

Mexico . 2,780 parts In-Stock

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2,780

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Kulean Microsystems

USA . 2,003 parts In-Stock

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2,003

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SupplyDigital Components

Austria . 1,053 parts In-Stock

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Corphita

USA . 815 parts In-Stock

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815

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Corohmni

South Africa . 381 parts In-Stock

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381

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UHIMA Technologies

Türkiye . 75 parts In-Stock

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Overview

Enhance your automotive electronics with the NV24C02UVLT2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality EEPROM technology that guarantees reliability and performance. With its compact design and wide operating temperature range, this product is ideal for various automotive applications. Offering 2048 bit memory density and 1000000 write/erase cycles, the NV24C02UVLT2G provides lasting value and efficiency to customers. Upgrade your systems with Onsemi's innovative solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM lightweight and durable, ideal for automotive applications.

Surface Mount: YES

The surface mount feature allows for easy integration onto PCBs, saving space and simplifying the assembly process.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the EEPROM meets automotive industry standards for reliability and performance.

Operating Mode: SYNCHRONOUS

The synchronous operation of the EEPROM facilitates faster data transfer and communication within the system.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V ensures compatibility with a wide range of electronic devices and systems.

No. of Terminals: 8

The 8 terminals provide sufficient connectivity options for interfacing with other components in the circuit.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

The compact and slim design of the package allows for space-saving installation in compact electronic devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range ensures reliable performance in harsh environmental conditions.

Organization: 2KX1

The 2KX1 organization provides a total memory capacity of 2K bits, suitable for storing a moderate amount of data.

Write Protection: HARDWARE

The hardware-based write protection feature ensures data security by preventing unauthorized write operations.

Technical Specifications

EEPROM NV24C02UVLT2G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C02UVLT2G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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