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24LC128-I/SNRVE

Microchip Technology

24LC128-I/SNRVE by Microchip Technology

24LC128-I/SNRVE by Microchip Technology is a serial EEPROM with a memory density of 131072 bits. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. This EEPROM is commonly used in industrial applications for its endurance of 1,000,000 write/erase cycles and wide operating temperature range (-40 to 85°C).

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

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750

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Vyrian

USA . 584 parts In-Stock

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584

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VNN

France . 455 parts In-Stock

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455

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,731 parts In-Stock

1+ parts

$1.970

100+ parts

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4,731

$1.970

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Corohmni

South Africa . 64 parts In-Stock

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$3.001

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64

$3.001

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$5.669

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$5.386

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$5.386

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900

$5.669

$5.386

$5.386

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Semicontronic

India . 1,238 parts In-Stock

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$9.000

100+ parts

$8.775

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$8.730

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1,238

$9.000

$8.775

$8.730

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AZTECH Wire

Italy . 379 parts In-Stock

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$12.543

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379

$12.543

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Ampacity Inc.

Singapore . 1,104 parts In-Stock

1+ parts

$25.000

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1,104

$25.000

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Continental Prestige Electronics

USA . 1,700 parts In-Stock

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1,700

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Argo Parts USA

USA . 838 parts In-Stock

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838

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Robosynatics

Brazil . 350 parts In-Stock

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350

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Lucentia Tech

USA . 350 parts In-Stock

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$1.879

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$1.879

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$1.879

350

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$1.879

$1.879

$1.879

Fulton Briggs Corp.

USA . 99 parts In-Stock

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99

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Bastille Electronics

Australia . 66 parts In-Stock

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66

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Overview

Discover the power of the 24LC128-I/SNRVE by Microchip Technology, a top-quality EEPROM that offers unparalleled performance and reliability. Manufactured by Microchip Technology, a trusted industry leader, this EEPROM is designed to meet the highest standards of quality and durability. With its compact design and advanced features, it is perfect for a wide range of applications. Whether you need to store data in consumer electronics, medical devices, or automotive systems, this EEPROM delivers exceptional value, benefits, and advantages. Experience faster access times, increased storage capacity, and enhanced data retention, all while enjoying the peace of mind that comes with Microchip Technology's renowned craftsmanship. Upgrade your electronic devices with the 24LC128-I/SNRVE and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the EEPROM, making it suitable for various environments.

Surface Mount: YES

The surface mount feature allows for easy installation and integration onto PCBs, saving valuable space and reducing assembly time.

No. of Functions: 1

With a single function, this EEPROM simplifies the design and operation, ensuring efficient performance.

Screening Level: TS 16949

The TS 16949 screening level ensures high quality and reliability, making this EEPROM a reliable choice for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard mounting techniques, making it convenient for manufacturing and assembly processes.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise control and timing, enhancing the overall performance and data transfer speed of the EEPROM.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V provides a stable power source for the EEPROM, ensuring consistent and reliable operation.

No. of Terminals: 8

With 8 terminals, this EEPROM offers easy connectivity and integration into electronic circuits, enabling seamless data exchange.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides compactness and space-saving advantages, making it suitable for applications with limited board space.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows the EEPROM to withstand harsh environmental conditions, making it suitable for industrial applications.

Organization: 16KX8

With an organization of 16KX8, this EEPROM offers a storage capacity of 16,384 words, providing ample space for data storage and retrieval.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold conditions, making it suitable for various environments.

I2C Control Byte: 1010DDDR

The I2C control byte allows for efficient communication and control of the EEPROM, enabling seamless integration into I2C bus systems.

Terminal Position: DUAL

The dual terminal position ensures flexibility in PCB layout and enables easy soldering, enhancing ease of use and reliability.

No. of Ports: 1

With a single port, this EEPROM offers simple and straightforward connectivity, facilitating easy integration into electronic systems.

Write Protection: HARDWARE

The hardware write protection feature enhances data security by restricting unauthorized write access, making it ideal for applications where data integrity is crucial.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75mm minimizes space requirements and allows for easy integration into compact designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

With a maximum clock frequency of 0.4 MHz, this EEPROM enables fast and efficient data transfer, ensuring optimal performance.

Width: 3.9 mm

The compact width of 3.9mm ensures compatibility with standard board layouts, making it convenient for integration into various electronic devices.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage of 2.5V allows for efficient power consumption and extends battery life in portable applications.

Length: 4.9 mm

The compact length of 4.9mm offers compatibility with standard board layouts, making it suitable for space-constrained devices.

Programming Voltage (V): 4.5

The programming voltage of 4.5V facilitates reliable and accurate data programming, ensuring precise control over stored information.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation and performance across a wide range of temperature conditions, making it suitable for demanding industrial applications.

Technology: CMOS

The CMOS technology used in this EEPROM provides low power consumption, high speed, and compatibility with a wide range of electronic systems.

Parallel or Serial: SERIAL

The serial interface simplifies data transfer and communication, enabling efficient integration into various systems and facilitating easy control and access to stored information.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and offers ease of soldering, ensuring long-term reliability and ease of assembly.

Maximum Supply Current: 3 mA

With a maximum supply current of 3mA, this EEPROM ensures efficient power consumption, making it suitable for energy-efficient applications.

No. of Words: 16384 words

The generous capacity of 16,384 words allows for extensive data storage and retrieval, offering flexibility in various applications.

Memory Width: 8

With a memory width of 8 bits, this EEPROM provides efficient storage and precise retrieval of data, ensuring accuracy and reliability.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures that stored information remains intact and reliable for extended periods, making it suitable for long-term applications.

Terminal Pitch: 1.27 mm

The small terminal pitch of 1.27mm enables easy integration and compatibility with standard PCB designs, facilitating efficient assembly and integration.

No. of Words Code: 16K

The 16K word code capacity provides ample space for storing codes and instructions, making it suitable for applications requiring extensive data storage and retrieval.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V allows for flexibility in power configurations and compatibility with a wide range of electronic systems.

Endurance: 1000000 Write/Erase Cycles

The EEPROM's high endurance of 1,000,000 write/erase cycles ensures reliable and long-lasting data storage and retrieval, making it suitable for frequent read/write operations.

Serial Bus Type: I2C

The I2C serial bus type simplifies communication and data transfer, enabling easy integration into I2C systems and enhancing overall compatibility.

Maximum Write Cycle Time (tWC): 5 ms

With a maximum write cycle time of 5ms, this EEPROM offers efficient data programming and fast write operations, ensuring optimal performance.

Memory Density: 131072 bit

The high memory density of 131,072 bits provides ample space for storing large amounts of data, making it suitable for applications requiring extensive data storage.

Memory IC Type: EEPROM

As an EEPROM, this product offers non-volatile memory capabilities, allowing for reliable data storage and retention even when power is disconnected.

Maximum Standby Current: 0.000001 Amp

With an ultra-low maximum standby current of 0.000001 Amp, this EEPROM minimizes power consumption in standby mode, making it suitable for energy-efficient designs.

Technical Specifications

EEPROM 24LC128-I/SNRVE attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

4.5

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC128-I/SNRVE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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