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NV24C08DTVLT3G

Onsemi

NV24C08DTVLT3G by Onsemi

NV24C08DTVLT3G by Onsemi is an AEC-Q100 EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles. Operating at -40 to 125 °C, it's ideal for automotive applications requiring reliable data storage in a compact form factor. With I2C serial bus type and hardware write protection, this EEPROM offers secure and efficient data management solutions.

Median Price

$0.510

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,553 parts In-Stock

1+ parts

$0.510

100+ parts

$0.451

1k+ parts

$0.418

10k+ parts

$0.309

2,553

$0.510

$0.451

$0.418

$0.309

Mouser Electronics

USA . 2,477 parts In-Stock

1+ parts

$0.510

100+ parts

$0.450

1k+ parts

$0.417

10k+ parts

$0.292

2,477

$0.510

$0.450

$0.417

$0.292

Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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54,000

-

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,023 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

-

1,023

$0.437

-

-

-

Vyrian

USA . 1,292 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

-

10k+ parts

-

1,292

$0.460

-

-

-

Flip Electronics

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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54,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 880 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

-

880

$0.160

-

-

-

Corphita

USA . 1,392 parts In-Stock

1+ parts

$0.414

100+ parts

-

1k+ parts

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10k+ parts

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1,392

$0.414

-

-

-

Corohmni

South Africa . 73 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

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10k+ parts

-

73

$0.460

-

-

-

Kulean Microsystems

USA . 3,274 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,274

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-

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Problanco Electronics

Mexico . 2,579 parts In-Stock

1+ parts

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100+ parts

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2,579

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SupplyDigital Components

Austria . 2,186 parts In-Stock

1+ parts

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2,186

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TANS Electronics

Latvia . 2,176 parts In-Stock

1+ parts

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2,176

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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UHIMA Technologies

Türkiye . 967 parts In-Stock

1+ parts

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100+ parts

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967

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Overview

Enhance your automotive applications with the NV24C08DTVLT3G EEPROM from Onsemi. With a focus on quality and reliability, Onsemi delivers cutting-edge technology that ensures superior performance and durability. This small outline, thin profile memory device offers 1Kx8 organization, 8192 bits of memory density, and 1000000 write/erase cycles for optimum functionality. Ideal for automotive environments, this EEPROM operates at a wide temperature range of -40 °C to 125°C, providing peace of mind in extreme conditions. Upgrade your systems with the NV24C08DTVLT3G and experience the unmatched value and benefits that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the EEPROM lightweight and durable, suitable for various applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data transfers are synchronized and efficient, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is a common and widely supported standard, making this EEPROM compatible with a wide range of systems.

Memory Density: 8192 bit

With a memory density of 8192 bits, this EEPROM can store a large amount of data, making it suitable for a variety of applications.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures longevity and reliability, making this EEPROM a dependable choice for data storage.

Serial Bus Type: I2C

The I2C serial bus type allows for easy integration and communication with other devices, enhancing the flexibility and usability of this EEPROM.

Technical Specifications

EEPROM NV24C08DTVLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DMMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C08DTVLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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