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NOM02B4-DR11G

Onsemi

NOM02B4-DR11G by Onsemi

NOM02B4-DR11G by Onsemi is an image sensor with 2048 horizontal pixels, operating at 0-50 °C. It has a supply voltage range of 4.5-5.5V and output range of 0.80-4.0V, suitable for applications requiring analog voltage output in a rectangular package style for panel mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,313 parts In-Stock

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Digiode

USA . 1,808 parts In-Stock

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AZTECH Wire

Italy . 745 parts In-Stock

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$21.150

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745

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Problanco Electronics

Mexico . 8,047 parts In-Stock

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SupplyDigital Components

Austria . 5,566 parts In-Stock

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Kulean Microsystems

USA . 5,269 parts In-Stock

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TANS Electronics

Latvia . 3,198 parts In-Stock

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Corphita

USA . 685 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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UHIMA Technologies

Türkiye . 388 parts In-Stock

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Overview

Capture every detail with the NOM02B4-DR11G image sensor by Onsemi. Crafted with precision and cutting-edge technology, this sensor is designed to deliver exceptional quality and performance in a compact package. Ideal for a wide range of applications, from industrial automation to security systems, this sensor offers unmatched value and reliability. Experience the difference with Onsemi's innovative solutions and take your project to the next level with the NOM02B4-DR11G.

Feature Benefit Bullets

Pixel Size (um) X: X

High pixel resolution for detailed and sharp images.

Maximum Supply Voltage: 5.5 V

Provides a higher voltage range for better performance and flexibility in power supply.

Body Width: 24.32 inch

Compact size allows for easy integration into various devices or systems.

Power Supplies (V): 5

Standard power supply requirement for easy compatibility with existing systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology offers high-quality image capture with low power consumption.

Body Height: 21.45 mm

Slim profile for fitting into tight spaces or slim devices.

Package Shape or Style: RECTANGULAR

Sleek and versatile design for easy mounting and integration.

Minimum Supply Voltage: 4.5 V

Lower minimum voltage requirement ensures efficient power usage.

Maximum Operating Temperature: 50 °C

Wide temperature range for operation in various environments.

Horizontal Pixel: 2048

High pixel count for capturing detailed and high-resolution images.

Output Range: 0.80-4.0V

Wide output range suitable for various applications and signal processing needs.

Output Type: ANALOG VOLTAGE

Analog output for easy interfacing with other systems and devices.

Minimum Operating Temperature: 0 °C

Low temperature threshold for reliable operation in different climates.

Maximum Operating Current: 106 mA

Low operating current for energy efficiency and extended battery life.

Housing: PLASTIC

Lightweight and durable plastic housing for protection and ease of handling.

Body Length/Diameter: 272 mm

Long body length for accommodating large sensor array and capturing wide-angle images.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Mounting Feature: PANEL MOUNT

Panel mount feature for convenient and secure installation in various systems.

Technical Specifications

Image Sensors NOM02B4-DR11G attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Body Width:

24.32 inch

Body Height:

21.45 mm

Body Length/Diameter:

272 mm

Horizontal Pixel:

2048

Housing:

PLASTIC

Mounting Feature:

Maximum Operating Current:

106 mA

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

X

Power Supplies (V):

5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Termination Type:

SOLDER

Vertical Pixel:

1

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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