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NLX1G99FMUTCG

Onsemi

NLX1G99FMUTCG by Onsemi

NLX1G99FMUTCG by Onsemi is a CMOS Schmitt Trigger IC with 25.7ns propagation delay, 30pF load capacitance, and 8A max I (ol). It operates at -55 to 125 °C and has a supply voltage range of 1.65V to 5.5V. Ideal for military-grade applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,707 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,823 parts In-Stock

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Problanco Electronics

Mexico . 6,815 parts In-Stock

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SupplyDigital Components

Austria . 3,344 parts In-Stock

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Kulean Microsystems

USA . 3,150 parts In-Stock

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Corphita

USA . 2,021 parts In-Stock

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Corohmni

South Africa . 330 parts In-Stock

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UHIMA Technologies

Türkiye . 111 parts In-Stock

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Overview

Experience superior performance and reliability with the NLX1G99FMUTCG by Onsemi. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this Other Function Logic IC offers unparalleled quality and precision. Ideal for a wide range of applications, this product provides fast propagation delay, low power consumption, and 3-state output characteristics. With a compact package style and dual terminal position, the NLX1G99FMUTCG delivers exceptional value and versatility. Elevate your projects with this cutting-edge technology and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material helps protect the IC and allows for easy handling during installation.

Propagation Delay At Nominal Supply: 25.7 ns

Fast propagation delay ensures quick response times and efficient operation of the logic IC.

Surface Mount: YES

Surface mount capability makes it easy to integrate this IC into various circuit designs.

Nominal Supply Voltage / Vsup: 2.5 V

Operates at a commonly used supply voltage, making it compatible with many different systems.

Load Capacitance (CL): 30 pF

Suitable for driving circuits with moderate capacitance requirements.

Operating Temperature: -55 to 125 °C

Wide temperature range allows for reliable operation in various environmental conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connectivity options.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to efficient operation.

Technical Specifications

Other Function Logic ICs NLX1G99FMUTCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

25.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G99FMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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