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NLV17SG17DFT2G

Onsemi

NLV17SG17DFT2G by Onsemi

NLV17SG17DFT2G by Onsemi is a CMOS Logic Gate with 35.9ns Propagation Delay, operating b/w -55 to 125 °C. It has a supply voltage range of 0.9V to 3.6V and comes in a small outline package suitable for military-grade applications requiring fast signal processing in compact spaces.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Vigor

Singapore . 249 parts In-Stock

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AZTECH Wire

Italy . 1,151 parts In-Stock

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Problanco Electronics

Mexico . 8,329 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,888 parts In-Stock

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SupplyDigital Components

Austria . 5,544 parts In-Stock

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Corphita

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Microchip USA

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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Overview

Discover the NLV17SG17DFT2G by Onsemi, a top-quality logic gate that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted industry leader known for cutting-edge technology and innovation, this product is perfect for a wide range of applications. With its advanced features and precise design, this logic gate provides customers with unmatched value, efficiency, and versatility. Upgrade your projects with the NLV17SG17DFT2G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Surface Mount: YES

Ease of installation and integration onto circuit boards, saving time and effort in the manufacturing process.

Nominal Supply Voltage / Vsup (V): 1.1

Optimal voltage level for stable and efficient performance of the logic gates.

Propagation Delay (tpd): 35.9 ns

Low propagation delay ensures fast signal processing and quick response times in logic operations.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes these logic gates suitable for a variety of environments and applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates NLV17SG17DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVP

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

35.9 ns

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SG17DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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