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MC10EP58DR2G

Onsemi

MC10EP58DR2G by Onsemi

MC10EP58DR2G by Onsemi is a 2-input multiplexer with 0.41 ns propagation delay, suitable for industrial applications. It operates at -40 to 85 °C and supports supply voltage range of 3-5.5 V, making it ideal for high-speed signal switching in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,838 parts In-Stock

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Digiode

USA . 249 parts In-Stock

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AZTECH Wire

Italy . 126 parts In-Stock

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$16.200

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SupplyDigital Components

Austria . 7,825 parts In-Stock

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Kulean Microsystems

USA . 6,755 parts In-Stock

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Microchip USA

USA . 5,098 parts In-Stock

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Problanco Electronics

Mexico . 4,040 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 1,159 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Corphita

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MC10EP58DR2G by Onsemi, a leading manufacturer in the industry. This multiplexer/demultiplexer offers lightning-fast 0.42 ns propagation delay, making it ideal for high-speed applications. With a compact design and industrial-grade temperature range, this product ensures seamless integration and operation in a variety of settings. Trust Onsemi's commitment to quality and innovation, and unlock new possibilities with the MC10EP58DR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Propagation Delay at Nominal Supply: 0.42 ns

The low propagation delay ensures fast and efficient signal processing in high-speed applications.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Having 2 inputs allows for flexibility in input signal selection, making it suitable for various signal routing applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with standard power sources and reduces power consumption.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is suitable for use in harsh environmental conditions or industrial settings.

Technology: ECL

The ECL (Emitter-Coupled Logic) technology offers high-speed and low-power operation, making it ideal for high-performance applications.

Technical Specifications

Multiplexer & Demultiplexer MC10EP58DR2G attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Onsemi

Specs

Additional Features:

NECL MODE OPERATING RANGE: VCC = 0 V WITH VEE = -3.0 V TO -5.5 V

Family:

10E

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

40 mA

Propagation Delay At Nominal Supply:

.42 ns

Propagation Delay (tpd):

.41 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC10EP58DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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