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MC100E163FN

Onsemi

MC100E163FN by Onsemi

MC100E163FN by Onsemi is a 2-function, 8-input multiplexer with 0.9 ns propagation delay at 5V. Operating b/w 0-85 °C, it has a terminal pitch of 1.27mm and supports surface mount applications. Ideal for high-speed data communication systems requiring fast signal switching.

Median Price

$3.858

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Rochester

USA . 615 parts In-Stock

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$3.430

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$3.070

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$2.890

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Verical

USA . 518 parts In-Stock

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$4.287

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$3.837

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$3.612

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Freelance Electronics

USA . 5 parts In-Stock

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Digiode

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Vyrian

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Electronics Depot

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ECAB

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mil-Aero Solutions, Inc.

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Inland Empire Components Inc.

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Bristol Electronics

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Flex Direct, LLC

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Inventory MP

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Sogenti Electronics

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Corohmni

South Africa . 129 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$19.270

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Continental Prestige Electronics

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Overview

Enhance your electronic designs with the MC100E163FN by Onsemi, a high-quality multiplexer & demultiplexer that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this versatile chip carrier device features 8 inputs, 2 functions, and a nominal supply voltage of 5V. With a fast propagation delay of just 0.9ns, this surface-mount component is perfect for applications requiring precision timing and control. Experience the value and benefits of Onsemi's cutting-edge technology with the MC100E163FN, providing customers with superior quality and exceptional functionality for their projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY material provides durability and reliability, making the product suitable for various applications.

Propagation Delay At Nominal Supply

Fast propagation delay of 0.8 ns ensures efficient signal processing and high-speed operation.

Surface Mount

Surface mount capability allows for easy installation and space-saving on PCBs.

No. of Inputs

8 inputs provide flexibility in handling multiple input signals efficiently.

Nominal Supply Voltage / Vsup (V)

Operates at a standard supply voltage of 5V, ensuring compatibility with common power sources.

Maximum Operating Temperature

With a maximum operating temperature of 85 °C, the product can withstand high temperature environments.

Output Characteristics

OPEN-EMITTER output characteristics offer versatility in signal output configurations.

Technology

ECL technology enables high-speed digital data processing and low-power consumption.

Technical Specifications

Multiplexer & Demultiplexer MC100E163FN attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

.8 ns

Propagation Delay (tpd):

.9 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100E163FN Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-431-2272, 5962014312272

NIIN

014312272

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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