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MC10EP105FAR2G

Onsemi

MC10EP105FAR2G by Onsemi

MC10EP105FAR2G by Onsemi is a Logic Gates IC with 4 functions, 2 inputs, and 0.35 ns propagation delay. Ideal for industrial applications, it operates b/w -40 to 85 °C with supply voltage range of 3-5.5V. The package is a low profile flatpack measuring 7x7mm in size.

Median Price

$10.879

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,593 parts In-Stock

1+ parts

-

100+ parts

$9.670

1k+ parts

$8.650

10k+ parts

$8.140

11,593

-

$9.670

$8.650

$8.140

Verical

USA . 4,680 parts In-Stock

1+ parts

-

100+ parts

$12.088

1k+ parts

$10.813

10k+ parts

-

4,680

-

$12.088

$10.813

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,983 parts In-Stock

1+ parts

$10.232

100+ parts

-

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-

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1,983

$10.232

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-

-

Vyrian

USA . 9,298 parts In-Stock

1+ parts

-

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9,298

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,642 parts In-Stock

1+ parts

$9.693

100+ parts

-

1k+ parts

-

10k+ parts

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1,642

$9.693

-

-

-

Corohmni

South Africa . 295 parts In-Stock

1+ parts

$10.770

100+ parts

-

1k+ parts

-

10k+ parts

-

295

$10.770

-

-

-

Component Stockers USA

USA . 15,627 parts In-Stock

1+ parts

$10.990

100+ parts

$10.330

1k+ parts

$9.340

10k+ parts

$9.340

15,627

$10.990

$10.330

$9.340

$9.340

AZTECH Wire

Italy . 924 parts In-Stock

1+ parts

$18.400

100+ parts

-

1k+ parts

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10k+ parts

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924

$18.400

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 29,977 parts In-Stock

1+ parts

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29,977

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Continental Prestige Electronics

USA . 11,593 parts In-Stock

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11,593

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Kulean Microsystems

USA . 8,072 parts In-Stock

1+ parts

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8,072

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TANS Electronics

Latvia . 7,035 parts In-Stock

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7,035

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Problanco Electronics

Mexico . 6,980 parts In-Stock

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6,980

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SupplyDigital Components

Austria . 3,475 parts In-Stock

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3,475

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UHIMA Technologies

Türkiye . 800 parts In-Stock

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800

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Microchip USA

USA . 140 parts In-Stock

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140

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Overview

Experience the unbeatable quality and reliability of Onsemi's MC10EP105FAR2G Logic Gates. With advanced technology and industrial-grade construction, this product offers superior performance and precision in a compact package. Ideal for a wide range of applications, this logic gate provides fast propagation delays and low power consumption, making it a valuable asset for any project. Trust in Onsemi's reputation for excellence and elevate your designs with the MC10EP105FAR2G Logic Gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to environmental factors, ensuring the longevity of the product.

No. of Functions: 4

Having 4 functions in one component allows for more complex logic operations to be performed efficiently.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V means this product is compatible with various systems and can be easily integrated into existing circuits.

Propagation Delay (tpd): 0.35 ns

With a low propagation delay of 0.35ns, this product ensures fast response times in logic operations, making it suitable for high-speed applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows this product to function reliably in a wide range of environments.

Technology: ECL

Using ECL technology ensures high-speed performance and low power consumption, making this product an efficient choice for logic gate applications.

Technical Specifications

Logic Gates MC10EP105FAR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

10E

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

MC10EP105FAR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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