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MC100E122FNR2G

Onsemi

MC100E122FNR2G by Onsemi

MC100E122FNR2G by Onsemi is a Logic Gates chip with 9 functions, 0.5 ns propagation delay at -4.5V supply. It operates b/w 0-85 °C and has matte tin finish, suitable for high-speed applications requiring fast signal processing in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,043 parts In-Stock

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Vyrian

USA . 1,557 parts In-Stock

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1,557

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Distributors (Availability)

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TANS Electronics

Latvia . 5,019 parts In-Stock

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Problanco Electronics

Mexico . 1,691 parts In-Stock

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Kulean Microsystems

USA . 1,261 parts In-Stock

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SupplyDigital Components

Austria . 1,059 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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228

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Corphita

USA . 91 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Discover the cutting-edge MC100E122FNR2G by Onsemi, a high-quality Logic Gates product that offers unmatched performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this chip carrier package is ideal for a wide range of applications. Boasting a propagation delay of just 0.5 ns and a nominal supply voltage of -4.5V, this logic gate delivers lightning-fast speeds and efficient power consumption. Whether you're a professional in the tech industry or an enthusiast looking to enhance your projects, the MC100E122FNR2G provides immense value with its superior quality, advanced technology, and versatile functionality. Elevate your designs with this top-of-the-line product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for long-term use.

Propagation Delay At Nominal Supply: 0.5 ns

Fast operation speed for quick response time.

Surface Mount: YES

Easily mountable on circuit boards for streamlined assembly.

No. of Functions: 9

Can perform multiple logic operations, making it versatile.

Package Shape: SQUARE

Space-efficient design for compact integration.

Nominal Supply Voltage / Vsup (V): -4.5

Optimal voltage for stable performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for various environments.

Terminal Finish: MATTE TIN

Provides corrosion resistance for longer shelf life.

Technology: ECL

Utilizes Emitter-Coupled Logic for high-speed operation.

Technical Specifications

Logic Gates MC100E122FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

9

No. of Inputs:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

49 mA

Propagation Delay At Nominal Supply:

.5 ns

Propagation Delay (tpd):

.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

-5.5 V

Minimum Supply Voltage (Vsup):

-4.2 V

Nominal Supply Voltage / Vsup (V):

-4.5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

MC100E122FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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