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MC100E112FNR2G

Onsemi

MC100E112FNR2G by Onsemi

MC100E112FNR2G by Onsemi is a logic gate with 4 functions, operating at -4.5 to 5V. With a propagation delay of 0.75ns, it's ideal for high-speed applications in ECL technology. This chip carrier package has 28 terminals and can withstand temperatures from 0 to 85 °C.

Median Price

$6.938

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,991 parts In-Stock

1+ parts

-

100+ parts

$5.550

1k+ parts

$4.960

10k+ parts

$4.670

1,991

-

$5.550

$4.960

$4.670

DigiKey

USA . 1,991 parts In-Stock

1+ parts

-

100+ parts

$7.300

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-

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1,991

-

$7.300

-

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Verical

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$6.938

1k+ parts

$6.200

10k+ parts

$5.838

1,500

-

$6.938

$6.200

$5.838

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 358 parts In-Stock

1+ parts

$5.871

100+ parts

-

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-

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358

$5.871

-

-

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Vyrian

USA . 8,628 parts In-Stock

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8,628

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Distributors (Availability)

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Corphita

USA . 215 parts In-Stock

1+ parts

$5.562

100+ parts

-

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215

$5.562

-

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Corohmni

South Africa . 289 parts In-Stock

1+ parts

$6.180

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289

$6.180

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-

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AZTECH Wire

Italy . 1,173 parts In-Stock

1+ parts

$8.470

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1,173

$8.470

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SupplyDigital Components

Austria . 6,756 parts In-Stock

1+ parts

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6,756

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Kulean Microsystems

USA . 4,215 parts In-Stock

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4,215

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QUARKTWIN TECHNOLOGY LTD

USA . 2,250 parts In-Stock

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2,250

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Problanco Electronics

Mexico . 2,074 parts In-Stock

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2,074

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Continental Prestige Electronics

USA . 1,991 parts In-Stock

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100+ parts

$5.360

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1,991

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$5.360

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Microchip USA

USA . 362 parts In-Stock

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362

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TANS Electronics

Latvia . 276 parts In-Stock

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276

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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Overview

Unlock the power of high-quality logic gates with the MC100E112FNR2G by Onsemi. Designed to deliver top-notch performance, this product offers unparalleled reliability and precision for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, customers can trust that they are getting a superior product that will meet their needs. Experience the value and benefits of this cutting-edge technology, providing fast propagation delay and exceptional output characteristics. Elevate your projects with the MC100E112FNR2G and enjoy the advantages of unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

No. of Functions: 4

Having 4 functions in one product increases efficiency and saves space in the circuit design.

Nominal Supply Voltage / Vsup (V): 5

A compatible supply voltage of 5V ensures optimal performance and reliability.

Propagation Delay (tpd): 0.75 ns

The low propagation delay of 0.75ns ensures fast signal processing and response times.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the product can withstand harsh environments.

Technology: ECL

ECL technology offers high-speed operation and high noise immunity, making it suitable for advanced applications.

Technical Specifications

Logic Gates MC100E112FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

4

No. of Inputs:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Propagation Delay (tpd):

.75 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100E112FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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