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MC100E122FNR2

Onsemi

MC100E122FNR2 by Onsemi

MC100E122FNR2 by Onsemi is a Logic Gates chip with 9 functions, 0.5 ns propagation delay at 5V. It operates b/w 0-85 °C and has a terminal pitch of 1.27mm. Ideal for high-speed applications requiring fast signal processing in electronic circuits.

Median Price

$5.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 449 parts In-Stock

1+ parts

-

100+ parts

$4.800

1k+ parts

$4.290

10k+ parts

$4.040

449

-

$4.800

$4.290

$4.040

Verical

USA . 449 parts In-Stock

1+ parts

-

100+ parts

$6.000

1k+ parts

-

10k+ parts

-

449

-

$6.000

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,012 parts In-Stock

1+ parts

$4.410

100+ parts

-

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-

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1,012

$4.410

-

-

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Digiode

USA . 1,059 parts In-Stock

1+ parts

$5.082

100+ parts

-

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1,059

$5.082

-

-

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DigiKey Marketplace

USA . 449 parts In-Stock

1+ parts

-

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-

1k+ parts

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449

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 426 parts In-Stock

1+ parts

$4.410

100+ parts

-

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-

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426

$4.410

-

-

-

Corphita

USA . 2,471 parts In-Stock

1+ parts

$4.815

100+ parts

-

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10k+ parts

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2,471

$4.815

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 29,645 parts In-Stock

1+ parts

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29,645

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Kulean Microsystems

USA . 6,188 parts In-Stock

1+ parts

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6,188

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Problanco Electronics

Mexico . 3,041 parts In-Stock

1+ parts

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3,041

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SupplyDigital Components

Austria . 1,944 parts In-Stock

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1,944

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TANS Electronics

Latvia . 1,897 parts In-Stock

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1,897

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Continental Prestige Electronics

USA . 449 parts In-Stock

1+ parts

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100+ parts

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449

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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12

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Overview

Discover the power of the MC100E122FNR2 from Onsemi, a cutting-edge logic gate that delivers unrivaled performance and reliability. With a package body material made of durable PLASTIC/EPOXY and a propagation delay of just 0.5 ns, this chip carrier is designed to exceed expectations in a variety of applications. Whether you're working on telecommunications, networking, or industrial automation projects, this Logic Gate is the perfect solution for your needs. Experience the quality and innovation Onsemi is known for, and unlock the full potential of your designs with the MC100E122FNR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, making it a reliable choice for various applications.

Propagation Delay At Nominal Supply: 0.5 ns

With a fast propagation delay, these logic gates can process signals quickly, making them suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage: 5V

Operating at a standard voltage of 5V makes these logic gates compatible with a wide range of systems and circuits.

Technology: ECL

Using Emitter-Coupled Logic technology ensures high-speed operation and low power consumption, making these logic gates efficient and reliable.

Technical Specifications

Logic Gates MC100E122FNR2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

9

No. of Inputs:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

49 mA

Propagation Delay At Nominal Supply:

.5 ns

Propagation Delay (tpd):

.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100E122FNR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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