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MC100E101FNR2G

Onsemi

MC100E101FNR2G by Onsemi

MC100E101FNR2G by Onsemi is a Logic Gates chip with 4 functions and inputs. It has a propagation delay of 0.6 ns at 5V, suitable for high-speed applications. With a square package style and J bend terminals, it is ideal for compact electronic designs requiring fast signal processing.

Median Price

$6.244

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 179 parts In-Stock

1+ parts

-

100+ parts

$5.550

1k+ parts

$4.960

10k+ parts

$4.670

179

-

$5.550

$4.960

$4.670

Verical

USA . 175 parts In-Stock

1+ parts

-

100+ parts

$6.938

1k+ parts

-

10k+ parts

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175

-

$6.938

-

-

Distributors (In-Stock)

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Digiode

USA . 944 parts In-Stock

1+ parts

$5.871

100+ parts

-

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944

$5.871

-

-

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Vyrian

USA . 6,257 parts In-Stock

1+ parts

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6,257

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Distributors (Availability)

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Corphita

USA . 280 parts In-Stock

1+ parts

$5.562

100+ parts

-

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280

$5.562

-

-

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Corohmni

South Africa . 426 parts In-Stock

1+ parts

$6.180

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-

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426

$6.180

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-

Component Stockers USA

USA . 252 parts In-Stock

1+ parts

$6.370

100+ parts

$6.000

1k+ parts

-

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252

$6.370

$6.000

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AZTECH Wire

Italy . 799 parts In-Stock

1+ parts

$16.160

100+ parts

-

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-

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799

$16.160

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 13,285 parts In-Stock

1+ parts

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13,285

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Kulean Microsystems

USA . 5,896 parts In-Stock

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5,896

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SupplyDigital Components

Austria . 5,417 parts In-Stock

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5,417

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Microchip USA

USA . 4,428 parts In-Stock

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4,428

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TANS Electronics

Latvia . 2,283 parts In-Stock

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2,283

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Problanco Electronics

Mexico . 2,174 parts In-Stock

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2,174

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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964

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Continental Prestige Electronics

USA . 194 parts In-Stock

1+ parts

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100+ parts

$5.360

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194

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$5.360

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Overview

Upgrade your logic gates to the next level with the MC100E101FNR2G by Onsemi. Designed with precision and quality in mind, this chip carrier package offers fast propagation delay, open-emitter output characteristics, and a wide supply voltage range for versatile applications. Whether you're working on telecommunications, data communications, or industrial controls, this logic gate is the perfect solution for your circuit design needs. Trust Onsemi's expertise and innovation to bring value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for a variety of applications.

Propagation Delay At Nominal Supply: 0.5 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes this product easy to integrate into circuit boards, saving space and simplifying assembly.

No. of Functions: 4

Having multiple functions in a single component reduces the overall component count in a circuit, leading to cost savings and increased efficiency.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this product compatible with a wide range of existing circuitry and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 indicates that this product can withstand moderate exposure to moisture during assembly or operation.

Technical Specifications

Logic Gates MC100E101FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

4

No. of Inputs:

4

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

42 mA

Propagation Delay At Nominal Supply:

.5 ns

Propagation Delay (tpd):

.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100E101FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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