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SN74HC14PWR

Texas Instruments

SN74HC14PWR by Texas Instruments

SN74HC14PWR by Texas Instruments is a CMOS logic gate with 6 functions, 31 ns propagation delay at 5V. It features Schmitt Trigger technology, operates in industrial temperature range (-40 to 85 °C), and has a small outline package for surface mount applications.

Median Price

$0.352

Lifecycle Status

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35

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Chip1Stop

Japan . 4,792 parts In-Stock

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Verical

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Avnet

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Component Electronics Inc.

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NAC Semi

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Ampacity Inc.

Singapore . 49,981 parts In-Stock

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Argo Parts USA

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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South Africa . 562 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Continental Prestige Electronics

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Parana Technologies

USA . 1,637 parts In-Stock

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DigiPath Technology Company

USA . 660 parts In-Stock

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ChromeModa Solutions

Germany . 917 parts In-Stock

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IDEA Electronic Components Group

UK . 323 parts In-Stock

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Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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Netroflash

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Overview

Experience the superior quality and reliability of Texas Instruments with the SN74HC14PWR Logic Gates. This versatile component offers exceptional performance and precision in a range of applications, from industrial automation to consumer electronics. With a compact design and low power consumption, this product provides valuable benefits for your projects. Trust in Texas Instruments for cutting-edge technology and unmatched value in every component. Elevate your designs with the SN74HC14PWR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 31 ns

Fast propagation delay ensures efficient performance of the logic gates.

Surface Mount: YES

Allows for easy installation and integration into circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common voltage supply standards, making it versatile in various applications.

Load Capacitance (CL): 50 pF

Suitable for handling typical load capacitance requirements in logic gate operations.

Power Supplies (V): 2/6

Supports a range of power supply voltages, providing flexibility in different operating conditions.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliability in harsh environments.

Schmitt Trigger: YES

Incorporation of Schmitt trigger enhances noise immunity and signal stability in the logic gates.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity in logic gate operations.

Technical Specifications

Logic Gates SN74HC14PWR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

31 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74HC14PWR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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