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SN74LVC1G32DCKR

Texas Instruments

SN74LVC1G32DCKR by Texas Instruments

SN74LVC1G32DCKR by Texas Instruments is a CMOS logic gate with 2 inputs, 3.3V supply voltage, and 4.5ns propagation delay. It is used in automotive applications due to its small outline package and wide operating temperature range of -40°C to 125°C. The device features a 3-STATE output and can handle a max power supply current of 0.01mA.

Median Price

$0.065

Lifecycle Status

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60

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1k+

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Mouser Electronics

USA . 432,007 parts In-Stock

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$0.110

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$0.053

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$0.043

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Arrow

USA . 2,486 parts In-Stock

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$0.090

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UK . 171,300 parts In-Stock

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DigiKey

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Verical

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Rochester

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Chip1Stop

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Digiode

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Ozdisan Elektronik

Türkiye . 4 parts In-Stock

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Component Electronics Inc.

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Nova Conductors

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Ampacity Inc.

Singapore . 45,897 parts In-Stock

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Semicontronic

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Netroflash

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Parana Technologies

USA . 2,004 parts In-Stock

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IDEA Electronic Components Group

UK . 190 parts In-Stock

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Germany . 140 parts In-Stock

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South Africa . 105 parts In-Stock

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Advanced Electronics

New Zealand . 750 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the SN74LVC1G32DCKR by Texas Instruments, a top-tier manufacturer known for innovation and reliability. This Logic Gates product offers lightning-fast propagation delay, versatile surface mount capabilities, and a wide operating temperature range, making it ideal for a variety of applications. From automotive to consumer electronics, this small yet powerful component delivers exceptional performance and efficiency. Upgrade your designs with Texas Instruments and experience the difference in quality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 4.5 ns

With a fast propagation delay, this logic gate ensures quick response time in processing signals.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the circuit board.

No. of Inputs: 2

With two inputs, this logic gate allows for more complex logic operations to be performed.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V, this product is energy efficient and compatible with standard power sources.

Load Capacitance (CL): 50 pF

The low load capacitance of 50 pF helps in reducing the overall power consumption of the circuit.

Power Supplies (V): 3.3

With a power supply voltage of 3.3V, this logic gate is suitable for low power applications.

No. of Terminals: 5

Having 5 terminals, this product provides flexibility in connecting to other components in the circuit.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style make this product compact and ideal for space-constrained designs.

Maximum I (ol): 32 Amp

With a maximum output current of 32A, this logic gate can drive high-power loads with ease.

Propagation Delay (tpd): 8 ns

The propagation delay of 8 ns ensures fast signal processing and high-speed operations.

Maximum Operating Temperature: 125 °C

Operating at a maximum temperature of 125°C, this product is suitable for a wide range of environmental conditions.

Output Characteristics: 3-STATE

The 3-state output characteristics allow for high flexibility in controlling the output signal.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this logic gate can withstand extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel/palladium/gold terminal finish provides excellent corrosion resistance and ensures long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for easy connection and installation in various circuit configurations.

Maximum Seated Height: 1.1 mm

With a maximum seated height of 1.1 mm, this product is suitable for compact designs with limited space.

Width: 1.25 mm

The narrow width of 1.25 mm enables tight spacing and efficient layout on the circuit board.

Minimum Supply Voltage (Vsup): 1.65 V

With a minimum supply voltage of 1.65V, this logic gate can operate even at low voltage levels.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering and assembly during manufacturing.

Length: 2 mm

The compact length of 2 mm makes this logic gate suitable for applications where space is limited.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this product meets the temperature and performance requirements of the automotive industry.

Technology: CMOS

Using CMOS technology, this logic gate offers low power consumption and high noise immunity.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable solder joints for stable connections.

Packing Method: TR

The TR packing method ensures safe transportation and handling of the product during shipping and storage.

Terminal Pitch: 0.65 mm

With a terminal pitch of 0.65 mm, this product allows for precise and compact placement on the circuit board.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this logic gate can handle higher voltage inputs and outputs.

Maximum Power Supply Current (ICC): 0.01 mA

Operating at a maximum power supply current of 0.01 mA, this product is energy efficient and minimizes power consumption.

Technical Specifications

Logic Gates SN74LVC1G32DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.5 ns

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G32DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-618-5004, 5962016185004

NIIN

016185004

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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