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SN74LVC1G34DBVRG4

Texas Instruments

SN74LVC1G34DBVRG4 by Texas Instruments

SN74LVC1G34DBVRG4 by Texas Instruments is a CMOS logic gate with 3-STATE output, 4.1 ns propagation delay at 3.3V, and 32 Amp max I (ol). It is used in automotive applications due to its low profile design, small outline package style, and wide operating temperature range from -40 to 125 °C.

Median Price

$0.326

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Overview

Unlock the power of cutting-edge technology with the SN74LVC1G34DBVRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality logic gates that are perfect for a wide range of applications. Whether you're looking to enhance your automotive systems or streamline your consumer electronics, this product offers unparalleled performance and reliability. With a small outline and low profile package style, this logic gate is designed for maximum efficiency without compromising on power. Trust Texas Instruments to provide you with the innovative solutions you need to stay ahead in today's fast-paced world.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the logic gate.

Propagation Delay At Nominal Supply: 4.1 ns

The low propagation delay of 4.1 ns ensures fast response time and efficient operation of the logic gate.

Surface Mount: YES

The surface mount compatibility makes it easy to integrate this logic gate into electronic circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides a suitable power source for the logic gate, ensuring reliable performance.

Load Capacitance (CL): 50 pF

With a load capacitance of 50 pF, this logic gate can effectively drive capacitive loads while maintaining signal integrity.

Power Supplies (V): 3.3

Operating at a supply voltage of 3.3V makes this logic gate compatible with common power sources, increasing its versatility.

No. of Terminals: 5

The 5 terminals provide multiple connection points for interfacing with other components, allowing for flexible circuit designs.

Maximum I (ol): 32 Amp

With a maximum output current of 32 Amps, this logic gate can drive high-current loads with ease.

Propagation Delay (tpd): 9.9 ns

The propagation delay of 9.9 ns ensures quick signal processing, making this logic gate suitable for high-speed applications.

Maximum Operating Temperature: 125 °C

The logic gate can operate reliably in high-temperature environments up to 125°C, increasing its suitability for a wide range of applications.

Output Characteristics: 3-STATE

The 3-state output allows the logic gate to be in one of three output states (high, low, or high-impedance), providing flexibility in signal routing.

Minimum Operating Temperature: -40 °C

The logic gate can withstand cold temperatures down to -40°C, ensuring operation in harsh environmental conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish provides excellent contact conductivity and corrosion resistance, enhancing the reliability and longevity of the logic gate.

Terminal Position: DUAL

The dual terminal position allows for easy soldering and connection to the circuit board, streamlining the assembly process.

Width: 1.6 mm

The compact width of 1.6mm saves space on the circuit board, making this logic gate suitable for applications with limited board real estate.

Maximum Seated Height: 1.45 mm

The low profile design with a maximum seated height of 1.45mm helps reduce the overall height of the electronic system, ideal for compact designs.

Minimum Supply Voltage (Vsup): 1.65 V

With a minimum supply voltage of 1.65V, this logic gate can operate efficiently even at low voltage levels, conserving power.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable soldering during the manufacturing process, maintaining the integrity of the connections.

Technology: CMOS

The CMOS technology used in this logic gate offers low power consumption and high noise immunity, contributing to energy efficiency and robust performance.

Terminal Form: GULL WING

The gull wing terminal form facilitates surface mounting and soldering, enhancing the ease of assembly and reliability of the connection.

Terminal Pitch: 0.95 mm

The tight terminal pitch of 0.95mm allows for close spacing of terminals on the circuit board, enabling high-density designs and efficient use of board space.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides flexibility in power supply options, accommodating a wide range of voltage inputs for the logic gate.

Maximum Power Supply Current (ICC): 0.001 mA

With a maximum power supply current of 0.001mA, this logic gate consumes minimal power during operation, contributing to overall energy efficiency.

Technical Specifications

Logic Gates SN74LVC1G34DBVRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.001 mA

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

9.9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC1G34DBVRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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