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SN74LVC2G14DBVTE4

Texas Instruments

SN74LVC2G14DBVTE4 by Texas Instruments

SN74LVC2G14DBVTE4 by Texas Instruments is a CMOS logic gate with 2 functions, operating at 1.8V nominal voltage and 3.3V power supplies. It features a propagation delay of 9.5ns, Schmitt Trigger technology, and 3-STATE output characteristics. Ideal for industrial applications requiring compact design and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,263 parts In-Stock

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Digiode

USA . 2,831 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 796 parts In-Stock

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$10.273

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Corohmni

South Africa . 33 parts In-Stock

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$16.941

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Parana Technologies

USA . 303 parts In-Stock

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$17.165

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$17.382

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DigiPath Technology Company

USA . 2,313 parts In-Stock

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$18.900

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ChromeModa Solutions

Germany . 5,976 parts In-Stock

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$19.286

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$15.815

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IDEA Electronic Components Group

UK . 446 parts In-Stock

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$19.286

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$18.322

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$17.357

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$25.057

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$23.804

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$23.804

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One Stop Electronics

USA . 329 parts In-Stock

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Semicontronic

India . 462 parts In-Stock

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$49.725

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$49.470

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Ampacity Inc.

Singapore . 1,455 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 3,222 parts In-Stock

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Argo Parts USA

USA . 2,306 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the high-quality SN74LVC2G14DBVTE4 by Texas Instruments, a reliable logic gate that offers exceptional performance and reliability. With Texas Instruments' reputation for excellence in semiconductor manufacturing, this product is guaranteed to meet your expectations. Ideal for various applications in electronics, this logic gate provides efficient signal processing with low power consumption. Trust in the value and benefits that this product brings to your projects, ensuring seamless operation and optimal functionality. Choose Texas Instruments for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring good protection for the internal components of the logic gates.

Surface Mount: YES

Being surface mountable makes the installation process easier and more efficient, especially in compact electronic designs.

No. of Functions: 2

Having multiple functions in a single device offers versatility and flexibility in circuit design.

Propogation Delay (tpd): 9.5 ns

The low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature range (-40 to 85°C) allows the logic gates to operate reliably in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates SN74LVC2G14DBVTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay (tpd):

9.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74LVC2G14DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-623-7794, 5962016237794

NIIN

016237794

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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