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MC10E101FNR2G

Onsemi

MC10E101FNR2G by Onsemi

MC10E101FNR2G by Onsemi is a Logic Gates chip with 4 functions and inputs. It has a propagation delay of 0.5 ns at 5V, suitable for high-speed applications. The package style is CHIP CARRIER, making it ideal for surface mount designs in electronic circuits.

Median Price

$6.938

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 496 parts In-Stock

1+ parts

$14.100

100+ parts

$8.920

1k+ parts

-

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496

$14.100

$8.920

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Rochester

USA . 7,523 parts In-Stock

1+ parts

-

100+ parts

$5.550

1k+ parts

$4.960

10k+ parts

$4.670

7,523

-

$5.550

$4.960

$4.670

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$6.938

1k+ parts

$6.200

10k+ parts

-

4,000

-

$6.938

$6.200

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Distributors (In-Stock)

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Digiode

USA . 1,227 parts In-Stock

1+ parts

$5.871

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1,227

$5.871

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Vyrian

USA . 6,736 parts In-Stock

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6,736

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Distributors (Availability)

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Corphita

USA . 1,557 parts In-Stock

1+ parts

$5.562

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-

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1,557

$5.562

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Corohmni

South Africa . 158 parts In-Stock

1+ parts

$6.180

100+ parts

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158

$6.180

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AZTECH Wire

Italy . 412 parts In-Stock

1+ parts

$12.450

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412

$12.450

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$13.076

100+ parts

$11.899

1k+ parts

$10.722

10k+ parts

-

270

$13.076

$11.899

$10.722

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Continental Prestige Electronics

USA . 7,535 parts In-Stock

1+ parts

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7,535

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TANS Electronics

Latvia . 5,198 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,097 parts In-Stock

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5,097

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Kulean Microsystems

USA . 5,062 parts In-Stock

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5,062

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SupplyDigital Components

Austria . 4,213 parts In-Stock

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4,213

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Problanco Electronics

Mexico . 3,488 parts In-Stock

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3,488

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Perfect Parts

USA . 3,347 parts In-Stock

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3,347

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UHIMA Technologies

Türkiye . 937 parts In-Stock

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937

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Authorized Procurement Solutions

USA . 496 parts In-Stock

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496

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GreenTree Electronics

Israel . 496 parts In-Stock

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496

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Microchip USA

USA . 451 parts In-Stock

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451

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Overview

Experience the next level of performance and reliability with the MC10E101FNR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality logic gates that ensure seamless operation in a variety of applications. Whether you're looking to enhance communication systems, improve signal processing, or optimize data transmission, this product offers unmatched efficiency and speed. Upgrade your projects with the MC10E101FNR2G and experience superior results that will elevate your work to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components due to its durability and resistance to heat and moisture, ensuring the longevity of the product.

Propagation Delay At Nominal Supply: 0.5 ns

Low propagation delay ensures fast switching speeds, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and reducing production costs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and components.

Output Characteristics: OPEN-EMITTER

Open-emitter outputs provide versatility in connecting to different circuit configurations, allowing for greater flexibility in design.

Technical Specifications

Logic Gates MC10E101FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

10E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

4

No. of Inputs:

4

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

36 mA

Propagation Delay At Nominal Supply:

.5 ns

Propagation Delay (tpd):

.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.505 mm

Trade Compliance

MC10E101FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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