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MC100EP01DG

Onsemi

MC100EP01DG by Onsemi

MC100EP01DG by Onsemi is a Logic Gate with 4 inputs, 0.33 ns propagation delay, and 3.3V nominal voltage. Ideal for industrial applications requiring fast signal processing in a small outline package style. Operates b/w -40 to 85°C temperature range with surface mount capability.

Median Price

$8.238

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 36 parts In-Stock

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$21.400

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36

$21.400

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Rochester

USA . 111,412 parts In-Stock

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-

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$6.420

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$5.750

10k+ parts

$5.410

111,412

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$6.420

$5.750

$5.410

DigiKey

USA . 111,412 parts In-Stock

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$8.450

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111,412

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$8.450

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Verical

USA . 27,090 parts In-Stock

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$8.025

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$7.188

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$6.763

27,090

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$8.025

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$6.763

Flip Electronics (Authorized)

USA . 11,662 parts In-Stock

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Digiode

USA . 1,645 parts In-Stock

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$6.792

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$6.792

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Flip Electronics

USA . 11,532 parts In-Stock

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Vyrian

USA . 2,981 parts In-Stock

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Ashlea Components Ltd

UK . 374 parts In-Stock

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Corphita

USA . 1,615 parts In-Stock

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$6.435

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1,615

$6.435

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Corohmni

South Africa . 181 parts In-Stock

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$6.709

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181

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Problanco Electronics

Mexico . 5,140 parts In-Stock

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Microchip USA

USA . 3,637 parts In-Stock

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TANS Electronics

Latvia . 3,306 parts In-Stock

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Kulean Microsystems

USA . 862 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 536 parts In-Stock

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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GreenTree Electronics

Israel . 136 parts In-Stock

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Kepictronics

USA . 125 parts In-Stock

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iodParts Technologies Inc.

India . 54 parts In-Stock

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Overview

Unleash the power of high-performance logic gates with the MC100EP01DG by Onsemi. Designed with precision and reliability in mind, this versatile component is perfect for a wide range of applications. From data communication to signal processing, this compact device offers lightning-fast propagation delays and a wide operating temperature range. Trust in Onsemi's expertise and quality craftsmanship to bring efficiency and innovation to your projects. Experience the value and benefits of the MC100EP01DG today and take your designs to the next level.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 0.35 ns

Low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates on a common supply voltage found in many electronic systems, making integration easier.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold temperatures, allowing for use in various environments.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable operation even in demanding conditions.

Technology: ECL

Utilizes Emitter-Coupled Logic technology, known for its high speed and low power consumption.

Technical Specifications

Logic Gates MC100EP01DG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

100E

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

4

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Maximum Power Supply Current (ICC):

38 mA

Propagation Delay At Nominal Supply:

.35 ns

Propagation Delay (tpd):

.33 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC100EP01DG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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