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KAI-16050-QXA-JD-B2

Onsemi

KAI-16050-QXA-JD-B2 by Onsemi

KAI-16050-QXA-JD-B2 by Onsemi is an image sensor with 5.5X5.5 um pixel size, 15.5 V max supply voltage, and 70 °C max operating temp. Ideal for applications requiring high-resolution imaging in industrial cameras or surveillance systems due to its CCD sensor type and 4964x3332 pixel resolution.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,170 parts In-Stock

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Digiode

USA . 1,073 parts In-Stock

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AZTECH Wire

Italy . 1,013 parts In-Stock

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$9.360

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TANS Electronics

Latvia . 4,413 parts In-Stock

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Problanco Electronics

Mexico . 3,645 parts In-Stock

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Kulean Microsystems

USA . 2,732 parts In-Stock

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Corphita

USA . 2,083 parts In-Stock

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SupplyDigital Components

Austria . 1,811 parts In-Stock

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UHIMA Technologies

Türkiye . 466 parts In-Stock

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Corohmni

South Africa . 123 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-16050-QXA-JD-B2 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability. Ideal for a wide range of applications, this image sensor offers unmatched value, providing crisp and clear images with a dynamic range of 64 dB. Whether you're capturing stunning landscapes or detailed close-ups, this sensor excels in any scenario. Upgrade your imaging capabilities today with the KAI-16050-QXA-JD-B2 by Onsemi.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

The small pixel size of 5.5um x 5.5um allows for high-resolution imaging and detailed pictures.

Maximum Supply Voltage 15.5 V

The high maximum supply voltage of 15.5V provides ample power for optimal performance and functionality.

Body Width 45.34 inch

The compact body width of 45.34 inches makes this image sensor easy to integrate into various devices and systems.

Power Supplies (V) 15

The 15V power supply ensures efficient and reliable operation of the image sensor.

Sensors or Transducers Type IMAGE SENSOR,CCD

Being a CCD image sensor ensures high-quality and low-noise image capture for superior image results.

Package Shape or Style RECTANGULAR

The rectangular package shape makes it easy to mount and align the image sensor in different applications.

Minimum Supply Voltage 14.5 V

The low minimum supply voltage of 14.5V ensures power efficiency and potential energy savings during operation.

Maximum Operating Temperature 70 °C

With a maximum operating temperature of 70 °C, this image sensor can perform optimally even in high-temperature environments.

Horizontal Pixel 4964

The high horizontal pixel count of 4964 ensures sharp and detailed images with excellent resolution.

Minimum Operating Temperature -50 °C

With a minimum operating temperature of -50 °C, this image sensor can withstand extreme cold conditions without affecting performance.

Dynamic Range 64 dB

The wide dynamic range of 64dB allows the image sensor to capture both bright and dark areas in an image with great accuracy and detail.

Vertical Pixel 3332

The vertical pixel count of 3332 contributes to the overall high-quality image output and ensures clear and detailed vertical resolution.

Body Length/Diameter 47.24 mm

The compact body length of 47.24mm makes this image sensor suitable for compact devices and systems where space is limited.

Termination Type SOLDER

The solder termination type ensures a secure connection for reliable and stable performance of the image sensor.

Array Type INTERLINE

The interline array type of the image sensor allows for faster readout speeds and reduced image lag, making it ideal for capturing fast-moving subjects.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable mounting option for the image sensor in various applications.

Technical Specifications

Image Sensors KAI-16050-QXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4964

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3332

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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