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AR0230CSSC00SUEA0-DPBR2

Onsemi

AR0230CSSC00SUEA0-DPBR2 by Onsemi

Onsemi's AR0230CSSC00SUEA0-DPBR2 is a 3x3 um CMOS image sensor with 1928H x 1088V pixels, offering a dynamic range of 96 dB. Operating at -30 to 85 °C, it has a digital current output interface and supports up to 60 fps frame rate. Ideal for applications requiring high-resolution imaging in low-light conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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DigiKey

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Vyrian

USA . 3,005 parts In-Stock

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Digiode

USA . 2,387 parts In-Stock

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Native Components

USA . 473 parts In-Stock

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$0.303

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$0.291

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Northwest PG Solutions

USA . 1,962 parts In-Stock

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$0.333

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,377 parts In-Stock

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Problanco Electronics

Mexico . 4,532 parts In-Stock

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SupplyDigital Components

Austria . 2,240 parts In-Stock

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TANS Electronics

Latvia . 1,812 parts In-Stock

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Corphita

USA . 1,318 parts In-Stock

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UHIMA Technologies

Türkiye . 849 parts In-Stock

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Corohmni

South Africa . 271 parts In-Stock

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Overview

Experience the cutting-edge technology of the AR0230CSSC00SUEA0-DPBR2 by Onsemi, a leading manufacturer in image sensors. This innovative product offers unparalleled quality and performance, making it ideal for a wide range of applications. With a compact design and impressive specifications, this image sensor provides customers with exceptional value, reliability, and superior image capturing capabilities. Upgrade your imaging system with the AR0230CSSC00SUEA0-DPBR2 and discover the difference today.

Feature Benefit Bullets

Pixel Size (um): 3X3

This small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.95 V

Operating at a maximum voltage of 1.95V ensures efficient power consumption and minimizes heat generation.

Master Clock: 48 MHz

With a fast master clock of 48 MHz, this image sensor can capture images quickly and accurately.

Body Width: 10 inch

The compact 10-inch body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, this product offers low noise, high sensitivity, and low power consumption.

Body Height: 1 mm

The slim 1mm body height is ideal for integration into small electronic devices or systems.

Package Shape or Style: SQUARE

The square package shape allows for easy mounting and integration into various electronic systems.

Minimum Supply Voltage: 1.7 V

Operating at a low minimum voltage of 1.7V ensures power efficiency and extended battery life.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this image sensor can withstand extended operation in various environments.

Horizontal Pixel: 1928

With 1928 horizontal pixels, this image sensor can capture detailed images with high resolution.

Output Range: -22-22mA

The wide output range of -22-22mA allows for flexible signal processing and compatibility with a variety of systems.

Output Type: DIGITAL CURRENT

The digital current output type provides accurate and reliable signal transmission for image data.

Minimum Operating Temperature: -30 °C

With a minimum operating temperature of -30 °C, this image sensor can function effectively in cold environments.

Maximum Operating Current: 265 mA

The image sensor's maximum operating current of 265mA ensures stable and consistent performance under load.

Dynamic Range: 96 dB

A high dynamic range of 96dB enables this image sensor to capture images with a wide range of light levels.

Vertical Pixel: 1088

With 1088 vertical pixels, this image sensor offers high-resolution images with clear details.

Body Length/Diameter: 10 mm

The compact 10mm body length/diameter allows for easy integration and assembly into electronic devices.

Spectral Response (nm): 350-1150

The wide spectral response range of 350-1150nm enables this image sensor to capture images across various light wavelengths.

Optical Format (inch): 1/2.7

The 1/2.7 inch optical format provides compatibility with a range of lenses and optical systems.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connection for integration into electronic circuits.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface output type offers easy connectivity and communication with external systems.

Frame Rate: 60 fps

With a frame rate of 60 frames per second, this image sensor can capture fast-moving objects with smooth motion.

Array Type: LINEAR

The linear array type allows for precise image capture and alignment without distortion or artifacts.

Sensitivity (V/lx.s): 4 V/lx.s

With a sensitivity of 4 V/lx.s, this image sensor can capture clear and detailed images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation onto printed circuit boards or electronic assemblies.

Technical Specifications

Image Sensors AR0230CSSC00SUEA0-DPBR2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.5 TO 3.1 V ANALOG SUPPLY VOLTAGE

Array Type:

LINEAR

Body Width:

10 inch

Body Height:

1 mm

Body Length/Diameter:

10 mm

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

265 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

4 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1088

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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