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2SC6071(TP-FA)

Onsemi

2SC6071(TP-FA) by Onsemi

2SC6071(TP-FA) by Onsemi is an NPN transistor with max power dissipation of 20W, hFE of 200, and max collector current of 10A. Ideal for applications requiring a single configuration in surface mount technology, it operates up to 150 °C making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,056 parts In-Stock

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Vyrian

USA . 832 parts In-Stock

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Kulean Microsystems

USA . 7,314 parts In-Stock

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SupplyDigital Components

Austria . 4,397 parts In-Stock

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Problanco Electronics

Mexico . 3,961 parts In-Stock

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TANS Electronics

Latvia . 1,258 parts In-Stock

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Northwest PG Solutions

USA . 976 parts In-Stock

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$4.593

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UHIMA Technologies

Türkiye . 297 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Native Components

USA . 191 parts In-Stock

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Corphita

USA . 71 parts In-Stock

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Overview

Looking for a high-quality NPN transistor? Look no further than the 2SC6071(TP-FA) by Onsemi. With a maximum power dissipation of 20W and a minimum DC current gain of 200, this transistor is perfect for a wide range of applications. Whether you're working on audio amplifiers, LED lighting, or motor controls, this transistor offers reliable performance and durability. Trust Onsemi's reputation for excellence and choose the 2SC6071(TP-FA) for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for applications requiring signal amplification.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits compared to multiple configurations, making this product simpler to work with.

Surface Mount: YES

Surface mount transistors are suitable for compact and densely packed electronic designs, making this product ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation, this transistor can handle heavy loads and dissipate heat efficiently, making it a reliable choice for high-power applications.

Minimum DC Current Gain (hFE): 200

Transistors with a high DC current gain provide better amplification capabilities, ensuring optimal performance in signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 10 A

With a high maximum collector current, this transistor can handle large current loads, making it a reliable choice for high-current applications such as motor control or power supply circuits.

Technical Specifications

Other Function Transistors 2SC6071(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6071(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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