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2SC6064

Onsemi

2SC6064 by Onsemi

The Onsemi 2SC6064 is an NPN transistor with a max power dissipation of 0.9W, min DC current gain of 40, and max collector current of 2A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,789 parts In-Stock

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Digiode

USA . 425 parts In-Stock

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425

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TANS Electronics

Latvia . 6,481 parts In-Stock

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SupplyDigital Components

Austria . 4,500 parts In-Stock

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4,500

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Problanco Electronics

Mexico . 3,497 parts In-Stock

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Northwest PG Solutions

USA . 1,015 parts In-Stock

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$4.733

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Corphita

USA . 432 parts In-Stock

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432

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Native Components

USA . 321 parts In-Stock

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$4.685

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Corohmni

South Africa . 271 parts In-Stock

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Kulean Microsystems

USA . 210 parts In-Stock

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UHIMA Technologies

Türkiye . 41 parts In-Stock

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Overview

Discover the power of the 2SC6064 by Onsemi, a high-quality NPN transistor that offers reliable performance and versatility. Manufactured by Onsemi, a trusted name in electronic components, this transistor is ideal for a wide range of applications. From amplifiers to power supplies, the 2SC6064 delivers exceptional value with its maximum power dissipation of 0.9W and maximum collector current of 2A. Experience the benefits of this top-notch transistor and take your projects to the next level with Onsemi's 2SC6064.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for applications requiring signal amplification.

Configuration: SINGLE

Single configuration transistors are easier to design and troubleshoot in circuits, making this product user-friendly for electronics enthusiasts and professionals.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle moderate power levels, making it suitable for a variety of low to medium power applications.

Minimum DC Current Gain (hFE): 40

Having a minimum DC current gain of 40 means that this transistor can effectively amplify current, making it reliable for applications requiring stable and consistent amplification.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C allows this transistor to withstand high temperature environments, making it suitable for applications where heat dissipation is a concern.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle relatively high current levels, making it suitable for applications requiring higher power handling capabilities.

Technical Specifications

Other Function Transistors 2SC6064 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6064 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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