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2SC6065

Onsemi

2SC6065 by Onsemi

The Onsemi 2SC6065 is an NPN transistor with a max power dissipation of 0.9W, hFE of 10, and IC of 1.5A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high collector current and operating temperature up to 150 °C.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,414 parts In-Stock

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Vyrian

USA . 372 parts In-Stock

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SupplyDigital Components

Austria . 7,182 parts In-Stock

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Kulean Microsystems

USA . 6,545 parts In-Stock

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TANS Electronics

Latvia . 3,822 parts In-Stock

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Corphita

USA . 1,787 parts In-Stock

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Northwest PG Solutions

USA . 1,593 parts In-Stock

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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Problanco Electronics

Mexico . 676 parts In-Stock

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Native Components

USA . 210 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi 2SC6065 NPN transistor. Manufactured by the industry leader, Onsemi, this transistor offers unmatched quality and reliability. Ideal for a variety of applications in electronics, this transistor provides superior performance with a maximum collector current of 1.5A and a minimum DC current gain of 10. Trust Onsemi to deliver cutting-edge technology that meets your needs. Elevate your projects with the 2SC6065 and experience the difference.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits due to their high input impedance and fast response times.

Configuration: SINGLE

Single configuration transistors are easy to implement in circuits and have a straightforward setup, making them ideal for simple applications.

Maximum Power Dissipation (Abs): 0.9 W

This high power dissipation rating allows the transistor to handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 indicates good amplification capabilities, making this transistor suitable for signal amplification tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor can withstand elevated temperatures, enhancing its durability in different environments.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5A, this transistor can handle relatively high current levels, making it suitable for applications requiring significant power handling capabilities.

Technical Specifications

Other Function Transistors 2SC6065 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6065 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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