Loading...

2SC6071(TP)

Onsemi

2SC6071(TP) by Onsemi

2SC6071(TP) by Onsemi is an NPN transistor with a max power dissipation of 20W, hFE of 200, and IC of 10A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,804 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,804

-

-

-

-

Digiode

USA . 493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

493

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,952 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,952

-

-

-

-

Problanco Electronics

Mexico . 3,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,638

-

-

-

-

TANS Electronics

Latvia . 2,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,903

-

-

-

-

Corphita

USA . 2,258 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,258

-

-

-

-

Northwest PG Solutions

USA . 1,344 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.593

10k+ parts

-

1,344

-

-

$4.593

-

Native Components

USA . 988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.547

10k+ parts

-

988

-

-

$4.547

-

Corohmni

South Africa . 324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

324

-

-

-

-

UHIMA Technologies

Türkiye . 273 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

273

-

-

-

-

Kulean Microsystems

USA . 172 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

172

-

-

-

-

Overview

Experience the unparalleled quality and reliability of Onsemi with the 2SC6071(TP) NPN transistor. This versatile component offers a wide range of applications in various electronic circuits, providing customers with exceptional performance and efficiency. With a maximum power dissipation of 20W and a minimum DC current gain of 200, this transistor delivers the power and precision needed for your projects. Trust Onsemi to deliver superior products that exceed expectations and bring value to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely applicable.

Configuration: SINGLE

The single configuration simplifies the design and wiring of the circuit, making it easy to integrate into electronics projects.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation, this transistor can handle significant power levels without overheating, ensuring reliability and durability.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent and stable amplification of signals in the circuit, enhancing the performance of the product.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function effectively even in challenging thermal conditions, increasing its versatility and reliability.

Maximum Collector Current (IC): 10 A

The high maximum collector current rating enables the transistor to handle high currents, making it suitable for power applications where large amounts of current are required.

Technical Specifications

Other Function Transistors 2SC6071(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6071(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20