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2SC6015

Onsemi

2SC6015 by Onsemi

The Onsemi 2SC6015 NPN transistor has a max power dissipation of 3.5W, hFE of 250, and max collector current of 9A. Ideal for applications requiring high current amplification in a surface-mount configuration with an operating temp up to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,259 parts In-Stock

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Digiode

USA . 2,053 parts In-Stock

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Native Components

USA . 977 parts In-Stock

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$19.941

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977

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Northwest PG Solutions

USA . 2,145 parts In-Stock

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$21.935

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$19.741

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Kulean Microsystems

USA . 4,818 parts In-Stock

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SupplyDigital Components

Austria . 3,370 parts In-Stock

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TANS Electronics

Latvia . 3,034 parts In-Stock

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Problanco Electronics

Mexico . 1,655 parts In-Stock

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Corphita

USA . 1,153 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Corohmni

South Africa . 159 parts In-Stock

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Overview

Elevate your projects to the next level with the Onsemi 2SC6015 transistor. Manufactured by industry leader Onsemi, this NPN transistor offers superior quality and reliability for a wide range of applications. Whether you're working on audio amplifiers, voltage regulators, or switching circuits, the 2SC6015 delivers exceptional performance with its high power dissipation, strong DC current gain, and impressive collector current. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for signal amplification applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and effort during manufacturing.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this product can handle power-intensive applications without overheating or damage.

Minimum DC Current Gain (hFE): 250

A minimum DC current gain of 250 ensures reliable and stable amplification of input signals, improving overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to withstand harsh environmental conditions and maintain performance under heat stress.

Maximum Collector Current (IC): 9 A

The high maximum collector current rating enables this product to handle high current loads with ease, making it suitable for power applications.

Technical Specifications

Other Function Transistors 2SC6015 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

9 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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