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2SC6022(TP-FA)

Onsemi

2SC6022(TP-FA) by Onsemi

2SC6022(TP-FA) by Onsemi is an NPN transistor with a max power dissipation of 15W and a min DC current gain of 250. It can handle a max collector current of 9A and operates at temperatures up to 150 °C. This transistor is suitable for various applications requiring high power dissipation and current handling capabilities in a surface-mount configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,989 parts In-Stock

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Digiode

USA . 1,983 parts In-Stock

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Native Components

USA . 830 parts In-Stock

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$78.310

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$75.178

830

$78.310

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$75.178

Northwest PG Solutions

USA . 486 parts In-Stock

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$86.141

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486

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Kulean Microsystems

USA . 3,760 parts In-Stock

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3,760

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Problanco Electronics

Mexico . 3,341 parts In-Stock

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TANS Electronics

Latvia . 3,178 parts In-Stock

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3,178

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SupplyDigital Components

Austria . 2,848 parts In-Stock

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Corphita

USA . 2,085 parts In-Stock

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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Overview

Discover the power of quality and reliability with the 2SC6022(TP-FA) by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional performance and durability in their products. This NPN transistor offers a multitude of applications in various electronic devices, providing customers with unmatched value and benefits. Experience seamless integration, maximum power dissipation, and high DC current gain with the 2SC6022(TP-FA), making it the perfect choice for your next project. Unlock endless possibilities with Onsemi's superior quality transistor.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and are suitable for basic circuit designs.

Surface Mount: YES

Surface mount transistors are compact and efficient, making them ideal for applications where space is limited.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capability, this transistor can handle higher power loads without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 250

A high DC current gain indicates efficient amplification capabilities, allowing for accurate signal processing and amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for demanding environments.

Maximum Collector Current (IC): 9 A

The high collector current rating allows this transistor to handle large current loads, making it suitable for power circuits and motor control applications.

Technical Specifications

Other Function Transistors 2SC6022(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

9 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6022(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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