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2SC6080-5

Onsemi

2SC6080-5 by Onsemi

The Onsemi 2SC6080-5 NPN transistor has a max power dissipation of 0.2W, min hFE of 140, and max IC of 0.5A. Ideal for applications requiring a single NPN configuration in surface mount technology, with an operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,194 parts In-Stock

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Digiode

USA . 1,342 parts In-Stock

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Northwest PG Solutions

USA . 1,060 parts In-Stock

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$2.970

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TANS Electronics

Latvia . 7,174 parts In-Stock

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Kulean Microsystems

USA . 2,862 parts In-Stock

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SupplyDigital Components

Austria . 2,017 parts In-Stock

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Problanco Electronics

Mexico . 1,548 parts In-Stock

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Corphita

USA . 1,285 parts In-Stock

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UHIMA Technologies

Türkiye . 546 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Native Components

USA . 58 parts In-Stock

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$2.619

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Overview

Unleash the power of innovation with the Onsemi 2SC6080-5 transistor. Crafted with precision and expertise, this NPN transistor offers unmatched quality and reliability for a wide range of applications. From amplifiers to power management systems, this single configuration transistor is designed to deliver exceptional performance and efficiency. Trust Onsemi's reputation for excellence and elevate your projects with the 2SC6080-5 transistor. Choose value, choose reliability, choose Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and making it suitable for small electronic devices.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle a decent amount of power without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 140

A minimum DC current gain of 140 indicates good amplification capabilities, making it suitable for use in signal amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, ensuring stable performance even in demanding environments.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows this transistor to handle moderate current loads, making it suitable for various electronic applications.

Technical Specifications

Other Function Transistors 2SC6080-5 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6080-5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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