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2SC6014

Onsemi

2SC6014 by Onsemi

The Onsemi 2SC6014 NPN transistor has a max power dissipation of 3.5W, hFE of 250, and max collector current of 5A. Ideal for applications requiring high current amplification in a surface-mount configuration with an operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,165 parts In-Stock

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Vyrian

USA . 676 parts In-Stock

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676

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Native Components

USA . 937 parts In-Stock

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$38.560

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$37.018

937

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$37.018

Northwest PG Solutions

USA . 682 parts In-Stock

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$42.416

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SupplyDigital Components

Austria . 6,958 parts In-Stock

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TANS Electronics

Latvia . 5,896 parts In-Stock

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Kulean Microsystems

USA . 4,112 parts In-Stock

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Corphita

USA . 1,950 parts In-Stock

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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Problanco Electronics

Mexico . 414 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC6014 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are designed to exceed expectations. The 2SC6014 is a versatile NPN transistor that offers exceptional performance and reliability, making it ideal for a wide range of applications. Whether you're working on a DIY project or a professional installation, this transistor provides the perfect solution. Experience the value and benefits that Onsemi brings to the table with the 2SC6014 - your go-to choice for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in various applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making this product user-friendly for both hobbyists and professionals.

Surface Mount: YES

Surface mount transistors save space on PCBs and are easier to assemble, allowing for compact and efficient designs.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this product can handle moderate to high power applications without overheating or failing.

Minimum DC Current Gain (hFE): 250

The high minimum DC current gain ensures a consistent and reliable amplification performance, making this product suitable for precision circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product can withstand high temperature environments, increasing its durability and reliability.

Maximum Collector Current (IC): 5 A

The high maximum collector current allows for handling high currents in various applications, making this product suitable for power circuits and motor control.

Technical Specifications

Other Function Transistors 2SC6014 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6014 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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