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2SC6022(TP)

Onsemi

2SC6022(TP) by Onsemi

2SC6022(TP) by Onsemi is an NPN transistor with a max power dissipation of 15W, hFE of 250, and IC of 9A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

Median Price

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Digiode

USA . 574 parts In-Stock

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Vyrian

USA . 395 parts In-Stock

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395

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Native Components

USA . 295 parts In-Stock

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$18.435

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Northwest PG Solutions

USA . 278 parts In-Stock

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TANS Electronics

Latvia . 3,556 parts In-Stock

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SupplyDigital Components

Austria . 3,110 parts In-Stock

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Kulean Microsystems

USA . 2,836 parts In-Stock

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Corphita

USA . 1,657 parts In-Stock

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Problanco Electronics

Mexico . 1,033 parts In-Stock

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC6022(TP) by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. The 2SC6022(TP) belongs to the category of Other Function Transistors, offering endless possibilities for various applications. With a maximum power dissipation of 15W and a minimum DC current gain of 250, this NPN transistor is a game-changer. Experience seamless performance and unmatched efficiency with the 2SC6022(TP) - your ultimate solution for all electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications due to their high input impedance and low output impedance.

Configuration: SINGLE

Single configuration transistors are simple to use and suitable for basic circuit designs.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15W, this transistor can handle high power applications without overheating.

Minimum DC Current Gain (hFE): 250

Having a minimum DC current gain of 250 ensures reliable and consistent amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

The transistor can operate at temperatures up to 150 °C, providing stability in different environmental conditions.

Maximum Collector Current (IC): 9 A

The high maximum collector current of 9A allows the transistor to handle large currents, making it suitable for high-power applications.

Technical Specifications

Other Function Transistors 2SC6022(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

9 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6022(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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