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2SC6021(TP)

Onsemi

2SC6021(TP) by Onsemi

2SC6021(TP) by Onsemi is an NPN transistor with a max power dissipation of 15W, hFE of 250, and IC of 10A. Ideal for applications requiring high current amplification in a single configuration. Operating temp up to 150 °C makes it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,247 parts In-Stock

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2,247

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Digiode

USA . 1,594 parts In-Stock

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1,594

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Distributors (Availability)

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Native Components

USA . 326 parts In-Stock

1+ parts

$114.064

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$109.501

326

$114.064

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$109.501

Northwest PG Solutions

USA . 274 parts In-Stock

1+ parts

$125.470

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274

$125.470

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Kulean Microsystems

USA . 7,929 parts In-Stock

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7,929

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Problanco Electronics

Mexico . 6,571 parts In-Stock

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6,571

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SupplyDigital Components

Austria . 3,941 parts In-Stock

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3,941

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Corphita

USA . 2,084 parts In-Stock

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2,084

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UHIMA Technologies

Türkiye . 807 parts In-Stock

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807

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TANS Electronics

Latvia . 803 parts In-Stock

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's 2SC6021(TP) NPN transistor. Ideal for a variety of applications, this single configuration transistor offers a maximum power dissipation of 15W and a maximum collector current of 10A, ensuring optimal performance. With a minimum DC current gain of 250 and a maximum operating temperature of 150 °C, this transistor provides exceptional value and benefits to customers seeking top-notch electronic components. Trust Onsemi for unmatched quality and innovation in the world of transistors.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely compatible.

Configuration: SINGLE

Single configuration transistors are easy to incorporate into circuits and offer simplicity in design and troubleshooting.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle larger loads and is suitable for applications requiring high power output.

Minimum DC Current Gain (hFE): 250

A high DC current gain ensures efficient amplification and signal processing, making this transistor reliable in various electronic systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and continue to perform reliably in demanding environments.

Maximum Collector Current (IC): 10 A

The high maximum collector current allows this transistor to handle heavy loads and deliver high levels of current in circuits, making it suitable for power applications.

Technical Specifications

Other Function Transistors 2SC6021(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6021(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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