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2SC6019(TP)

Onsemi

2SC6019(TP) by Onsemi

2SC6019(TP) by Onsemi is an NPN transistor with a max power dissipation of 15W, hFE of 250, and IC of 7A. Ideal for applications requiring high current amplification in a single configuration, it operates up to 150 °C making it suitable for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,378 parts In-Stock

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Vyrian

USA . 2,006 parts In-Stock

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2,006

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Kulean Microsystems

USA . 7,513 parts In-Stock

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7,513

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SupplyDigital Components

Austria . 4,317 parts In-Stock

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Problanco Electronics

Mexico . 3,743 parts In-Stock

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3,743

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Native Components

USA . 872 parts In-Stock

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$3.169

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872

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$3.169

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Northwest PG Solutions

USA . 639 parts In-Stock

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$3.202

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639

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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516

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Corohmni

South Africa . 393 parts In-Stock

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393

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TANS Electronics

Latvia . 297 parts In-Stock

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Corphita

USA . 183 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC6019(TP) by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unmatched quality and reliability in their products. The 2SC6019(TP) falls under the category of Other Function Transistors, offering NPN polarity and a single configuration. With a maximum power dissipation of 15W and a minimum DC current gain of 250, this transistor is designed for high-performance applications. Experience the value and benefits of enhanced efficiency and precision with the 2SC6019(TP), making it the perfect choice for your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances reliability by reducing the number of components needed.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 250

A high minimum DC current gain ensures efficient amplification of signals, making this transistor ideal for applications requiring high gain.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate reliably in a wide range of environments, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 7 A

With a high maximum collector current, this transistor can handle higher current loads, making it suitable for power applications that require high current capabilities.

Technical Specifications

Other Function Transistors 2SC6019(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC6019(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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