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2SC6080-4

Onsemi

2SC6080-4 by Onsemi

The Onsemi 2SC6080-4 NPN transistor has a max power dissipation of 0.2W, min DC current gain of 100, and max collector current of 0.5A. It is used in applications requiring a single NPN configuration for surface mount setups, with an operating temp up to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,458 parts In-Stock

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Digiode

USA . 2,368 parts In-Stock

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Northwest PG Solutions

USA . 732 parts In-Stock

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$2.970

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732

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SupplyDigital Components

Austria . 3,767 parts In-Stock

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TANS Electronics

Latvia . 3,712 parts In-Stock

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Problanco Electronics

Mexico . 3,031 parts In-Stock

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Kulean Microsystems

USA . 2,078 parts In-Stock

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UHIMA Technologies

Türkiye . 953 parts In-Stock

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Native Components

USA . 751 parts In-Stock

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Corphita

USA . 748 parts In-Stock

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Corohmni

South Africa . 92 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC6080-4 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in all their products. The 2SC6080-4 falls under the category of Other Function Transistors, offering unparalleled performance and versatility. From amplifiers to power supplies, this NPN transistor is perfect for a wide range of applications. Experience the value and benefits of Onsemi's 2SC6080-4, where quality meets functionality for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

Single configuration transistors are easy to handle and integrate into circuit designs, providing simplicity and efficiency.

Surface Mount: YES

Surface mount capability allows for easy soldering onto circuit boards, making installation convenient and reducing assembly time.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels while maintaining stable performance.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures reliable amplification of signals, enabling precise control over the output in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector Current (IC): 0.5 A

A maximum collector current of 0.5A allows for handling of moderate current levels, making this transistor suitable for power switching and amplification tasks.

Technical Specifications

Other Function Transistors 2SC6080-4 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6080-4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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