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2SC6021(TP-FA)

Onsemi

2SC6021(TP-FA) by Onsemi

2SC6021(TP-FA) by Onsemi is an NPN transistor with a max power dissipation of 15W and max collector current of 10A. With a min DC current gain of 250, it operates up to 150 °C. Ideal for applications requiring high power handling in a surface-mount configuration.

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Vyrian

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Digiode

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Native Components

USA . 568 parts In-Stock

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Northwest PG Solutions

USA . 1,276 parts In-Stock

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Problanco Electronics

Mexico . 2,075 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 954 parts In-Stock

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SupplyDigital Components

Austria . 749 parts In-Stock

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UHIMA Technologies

Türkiye . 716 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Unlock the potential of your electronic projects with the high-quality 2SC6021(TP-FA) NPN transistor from Onsemi. With a maximum power dissipation of 15W and a minimum DC current gain of 250, this transistor is perfect for a wide range of applications. Whether you're designing amplifiers, switches, or voltage regulators, this single configuration transistor offers reliability and performance that you can trust. Trust Onsemi's reputation for excellence and choose the 2SC6021(TP-FA) for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this product suitable for signal amplification purposes.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and require simpler wiring, making them convenient for various electronic projects.

Surface Mount: YES

Surface mount transistors are compact and allow for efficient use of circuit board space, making them ideal for designs where size is a constraint.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation rating of 15W, this transistor can handle high power applications without the risk of overheating or damage.

Minimum DC Current Gain (hFE): 250

A high minimum DC current gain of 250 ensures reliable and consistent amplification of signals, making this transistor suitable for precision applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for industrial or high-temperature environments.

Maximum Collector Current (IC): 10 A

A high maximum collector current rating of 10A allows this transistor to handle large currents, making it suitable for power applications where high current is required.

Technical Specifications

Other Function Transistors 2SC6021(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6021(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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