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2SC6016

Onsemi

2SC6016 by Onsemi

Onsemi's 2SC6016 NPN transistor has a max power dissipation of 3.5W, hFE of 250, and max collector current of 8A. Ideal for applications requiring high current amplification in surface-mount configurations at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,983 parts In-Stock

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Digiode

USA . 307 parts In-Stock

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Native Components

USA . 899 parts In-Stock

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$38.335

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$36.802

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Northwest PG Solutions

USA . 1,339 parts In-Stock

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$42.168

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Problanco Electronics

Mexico . 6,216 parts In-Stock

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Kulean Microsystems

USA . 2,053 parts In-Stock

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Corphita

USA . 1,955 parts In-Stock

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SupplyDigital Components

Austria . 1,365 parts In-Stock

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TANS Electronics

Latvia . 758 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2SC6016. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in every product they produce. The 2SC6016, as part of the Other Function Transistors category, offers unparalleled performance and versatility for a wide range of applications. With its NPN polarity, single configuration, and surface mount capability, this transistor ensures seamless integration and maximum efficiency. Elevate your projects with the 2SC6016's superior power dissipation, high DC current gain, and impressive collector current capacity. Trust Onsemi to provide cutting-edge solutions that exceed expectations and bring value to your work.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easy to implement and troubleshoot, making them a reliable choice for various electronic applications.

Surface Mount: YES

Surface mount transistors save space on the PCB, allowing for smaller and more compact electronic devices.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating or failing.

Minimum DC Current Gain (hFE): 250

A high DC current gain ensures accurate amplification of the input signal, making the transistor suitable for various audio and signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows this transistor to withstand elevated temperatures, ensuring reliable performance in harsh environments.

Maximum Collector Current (IC): 8 A

With a high maximum collector current rating, this transistor can handle heavy load currents, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors 2SC6016 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

250

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC6016 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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