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BSS84AKMB,315

NXP Semiconductors

BSS84AKMB,315 by NXP Semiconductors

BSS84AKMB,315 by NXP Semiconductors is a P-CHANNEL transistor with a max drain current of 0.23A and power dissipation of 0.715W in enhancement mode. It utilizes metal-oxide semiconductor technology, operates at up to 150°C, and is ideal for surface mount applications requiring high efficiency and performance.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 17,410 parts In-Stock

1+ parts

$0.643

100+ parts

$0.232

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$0.160

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17,410

$0.643

$0.232

$0.160

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TTI

USA . 40,000 parts In-Stock

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$0.049

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$0.049

Arrow

USA . 20,000 parts In-Stock

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Verical

USA . 20,000 parts In-Stock

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Rochester

USA . 10,000 parts In-Stock

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$0.057

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$0.047

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$0.042

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$0.057

$0.047

$0.042

Chip1Stop

Japan . 9,875 parts In-Stock

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$0.046

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9,875

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$0.046

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Distributors (In-Stock)

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Digiode

USA . 1,219 parts In-Stock

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$0.044

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$0.044

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.072

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$0.072

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Chip Stock

USA . 86,000 parts In-Stock

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Vyrian

USA . 2,285 parts In-Stock

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VNN

France . 1,860 parts In-Stock

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Anansix

USA . 1,607 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 20,348 parts In-Stock

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$0.039

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20,348

$0.039

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Semicontronic

India . 19,885 parts In-Stock

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$0.039

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$0.038

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$0.038

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19,885

$0.039

$0.038

$0.038

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Corphita

USA . 1,510 parts In-Stock

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$0.041

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$0.041

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Argo Parts USA

USA . 3,155 parts In-Stock

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$0.065

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$0.063

3,155

$0.065

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$0.063

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$0.072

100+ parts

$0.068

1k+ parts

$0.065

10k+ parts

$0.064

800

$0.072

$0.068

$0.065

$0.064

Modulus Dynamics

Lithuania . 500 parts In-Stock

1+ parts

$0.076

100+ parts

$0.076

1k+ parts

$0.073

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500

$0.076

$0.076

$0.073

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AZTECH Wire

Italy . 8,798 parts In-Stock

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$0.120

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8,798

$0.120

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Continental Prestige Electronics

USA . 17,613 parts In-Stock

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$0.255

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$0.096

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$0.061

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17,613

$0.255

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$0.061

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Aztec Data Supply Inc.

USA . 924 parts In-Stock

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$1.310

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$1.310

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Corohmni

South Africa . 48 parts In-Stock

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$1.804

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48

$1.804

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.935

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$1.761

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$1.587

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$1.935

$1.761

$1.587

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Perfect Parts

USA . 168,000 parts In-Stock

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Lixinc

USA . 18,048 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,040 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,580 parts In-Stock

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Supply Digital

USA . 1,531 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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$0.468

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$0.468

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$0.468

300

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$0.468

$0.468

$0.468

Overview

Upgrade your electronic projects with the NXP Semiconductors BSS84AKMB,315 P-CHANNEL transistor. This high-quality component offers enhanced performance and reliability, perfect for a variety of applications. With its single configuration and surface mount design, it's easy to integrate into your designs. Increase efficiency and precision with the BSS84AKMB,315, delivering a maximum drain current of 0.23A and a power dissipation of 0.715W. Trust in NXP Semiconductors for top-of-the-line technology that brings value and innovation to your projects.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high current carrying capability, making them efficient for high power applications.

Configuration: SINGLE

Single configuration transistors are easy to design into circuits and require less space, making them ideal for compact electronic devices.

Surface Mount: YES

Surface mount transistors are suitable for automated assembly processes, speeding up production and reducing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low leakage current, improving overall circuit efficiency.

Maximum Drain Current (Abs) (ID): 0.23 A

With a high maximum drain current rating, this transistor can handle heavy loads without overheating or failing prematurely.

Maximum Power Dissipation (Abs): 0.715 W

The high power dissipation capability ensures that the transistor can operate efficiently without getting damaged due to excessive heat.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption, making it suitable for a wide range of electronic applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to perform reliably in harsh environments without thermal shutdown.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, enhancing the overall reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures that the transistor can withstand the rigors of the soldering process without damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance makes the transistor suitable for lead-free soldering processes, meeting RoHS compliance requirements.

Technical Specifications

Other Function Transistors BSS84AKMB,315 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BSS84AKMB,315 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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