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2SC2314E

Onsemi

2SC2314E by Onsemi

The Onsemi 2SC2314E is a NPN BJT transistor with hFE of 100, VCE of 45V, and IC of 1A. Ideal for switching applications, it has a fT of 250MHz. Its plastic/epoxy body and through-hole terminals make it suitable for flange mount configurations.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 146,706 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

146,706

-

$0.172

$0.143

$0.127

DigiKey

USA . 146,706 parts In-Stock

1+ parts

-

100+ parts

-

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$0.210

146,706

-

-

-

$0.210

Verical

USA . 108,750 parts In-Stock

1+ parts

-

100+ parts

-

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$0.159

108,750

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-

-

$0.159

Distributors (In-Stock)

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Digiode

USA . 1,682 parts In-Stock

1+ parts

$0.134

100+ parts

-

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1,682

$0.134

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.245

100+ parts

-

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10

$0.245

-

-

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Vyrian

USA . 126,371 parts In-Stock

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126,371

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Chip Stock

USA . 21,000 parts In-Stock

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21,000

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LIBRA Elektronik GmbH

Germany . 400 parts In-Stock

1+ parts

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400

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Electronic Expediters

USA . 365 parts In-Stock

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365

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GES GmbH

Germany . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,174 parts In-Stock

1+ parts

$0.127

100+ parts

-

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2,174

$0.127

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Corohmni

South Africa . 87 parts In-Stock

1+ parts

$0.141

100+ parts

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87

$0.141

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

$0.231

10k+ parts

-

1,000

$0.240

-

$0.231

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Continental Prestige Electronics

USA . 146,706 parts In-Stock

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100+ parts

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$0.119

10k+ parts

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146,706

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-

$0.119

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QUARKTWIN TECHNOLOGY LTD

USA . 17,612 parts In-Stock

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17,612

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Kulean Microsystems

USA . 8,203 parts In-Stock

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8,203

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Problanco Electronics

Mexico . 5,907 parts In-Stock

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5,907

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TANS Electronics

Latvia . 3,014 parts In-Stock

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3,014

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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SupplyDigital Components

Austria . 575 parts In-Stock

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575

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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550

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Assy Fe

Spain . 9 parts In-Stock

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9

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Overview

Boost your electronic projects with the high-quality 2SC2314E NPN transistor by Onsemi. This small signal BJT is perfect for switching applications, offering a maximum collector-emitter voltage of 45V and a maximum collector current of 1A. With a minimum DC current gain of 100 and a nominal transition frequency of 250MHz, this transistor provides reliable performance in a durable plastic/epoxy package. Trust Onsemi's expertise in semiconductor manufacturing to deliver a top-notch product that will enhance the functionality of your circuits. Upgrade your designs with the 2SC2314E and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and installation, making it ideal for straightforward applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such circuits.

Package Shape: RECTANGULAR

Facilitates easy mounting and compact layout in circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to the circuit board, ensuring stable operation.

No. of Terminals: 3

Simplified terminal configuration for easy integration into circuits with minimum connections required.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and predictable amplification characteristics.

Maximum Collector-Emitter Voltage: 45 V

Allows for operation at higher voltages, providing flexibility in power supply requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, suitable for a wide range of applications.

Maximum Collector Current (IC): 1 A

Capable of handling higher current levels, making it suitable for medium to high-power circuit applications.

Terminal Finish: Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Provides excellent conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: SINGLE

Simplified terminal layout for easier PCB design and assembly, reducing complexity.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2314E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2314E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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