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MT28EW256ABA1LJS-0SIT

Micron Technology

MT28EW256ABA1LJS-0SIT by Micron Technology

Micron Technology's MT28EW256ABA1LJS-0SIT is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers fast access time of 70ns and industrial temperature grade suitability. With parallel interface and small outline package, it's ideal for high-speed data storage applications.

Median Price

$12.130

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 96 parts In-Stock

1+ parts

$8.340

100+ parts

$7.159

1k+ parts

$6.717

10k+ parts

$6.547

96

$8.340

$7.159

$6.717

$6.547

Newark

USA . 576 parts In-Stock

1+ parts

$15.920

100+ parts

-

1k+ parts

-

10k+ parts

-

576

$15.920

-

-

-

Mouser Electronics

USA . 1,141 parts In-Stock

1+ parts

$22.630

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

$22.630

-

-

-

Avnet

USA . 6,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

6,912

-

-

-

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Future Electronics

Canada . 960 parts In-Stock

1+ parts

-

100+ parts

$4.750

1k+ parts

$4.600

10k+ parts

-

960

-

$4.750

$4.600

-

Verical

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10

-

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,430 parts In-Stock

1+ parts

$6.346

100+ parts

-

1k+ parts

-

10k+ parts

-

2,430

$6.346

-

-

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Vyrian

USA . 220 parts In-Stock

1+ parts

$6.680

100+ parts

-

1k+ parts

-

10k+ parts

-

220

$6.680

-

-

-

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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24,000

-

-

-

-

Cyclops Electronics Ltd

UK . 2,752 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,752

-

-

-

-

NAC Semi

USA . 1,728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.300

10k+ parts

$5.820

1,728

-

-

$6.300

$5.820

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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750

-

-

-

-

IBS Electronics

USA . 96 parts In-Stock

1+ parts

-

100+ parts

$340.387

1k+ parts

-

10k+ parts

-

96

-

$340.387

-

-

Prism Electronics

USA . 12 parts In-Stock

1+ parts

-

100+ parts

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12

-

-

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

1+ parts

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3

-

-

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NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$2.677

100+ parts

-

1k+ parts

-

10k+ parts

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100

$2.677

-

-

-

Corphita

USA . 1,426 parts In-Stock

1+ parts

$6.012

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

$6.012

-

-

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Continental Prestige Electronics

USA . 399 parts In-Stock

1+ parts

$8.270

100+ parts

$6.240

1k+ parts

-

10k+ parts

-

399

$8.270

$6.240

-

-

Ampacity Inc.

Singapore . 196 parts In-Stock

1+ parts

$10.230

100+ parts

-

1k+ parts

-

10k+ parts

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196

$10.230

-

-

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Perfect Parts

USA . 19,085 parts In-Stock

1+ parts

-

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19,085

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-

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A-Z Elektronik GmbH

Germany . 5,423 parts In-Stock

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5,423

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-

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Authorized Procurement Solutions

USA . 3,200 parts In-Stock

1+ parts

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3,200

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Argo Parts USA

USA . 1,168 parts In-Stock

1+ parts

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1,168

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-

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GreenTree Electronics

Israel . 1,152 parts In-Stock

1+ parts

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1,152

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-

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Glotronic Ltd.

UK . 373 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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373

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-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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100

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-

Overview

Experience lightning-fast data storage and retrieval with the MT28EW256ABA1LJS-0SIT from Micron Technology. As a leading manufacturer in flash memory technology, Micron delivers top-quality products that are perfect for a wide range of applications. With its high memory density and fast access time, this NOR type memory IC provides exceptional value and performance. Whether you're looking to enhance your industrial equipment or boost the capabilities of your embedded systems, the MT28EW256ABA1LJS-0SIT is the ideal solution for your data storage needs. Trust Micron Technology for reliable, high-performance memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability, making this product suitable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy installation in a variety of electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and efficiency in data access.

Nominal Supply Voltage / Vsup (V): 3

Nominal supply voltage of 3V is commonly used and compatible with many electronic systems.

Organization: 16MX16

Organized as 16MX16, this flash memory offers a high level of data storage capacity.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures (-40°C) makes this product suitable for a wide range of environments.

Technology: CMOS

CMOS technology ensures low power consumption and fast operation, enhancing the efficiency of the flash memory.

Memory Density: 268435456 bit

High memory density of 268435456 bits allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory MT28EW256ABA1LJS-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

MT28EW256ABA1LJS-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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