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N25Q128A13ESF40E

Micron Technology

N25Q128A13ESF40E by Micron Technology

Micron Technology's N25Q128A13ESF40E is a 128M NOR flash memory with SPI serial bus, 108 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring high endurance and fast data transfer speeds.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 17,580 parts In-Stock

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17,580

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Vyrian

USA . 2,279 parts In-Stock

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2,279

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Netsource Technology, Inc.

USA . 448 parts In-Stock

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448

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Digiode

USA . 337 parts In-Stock

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337

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Nova Conductors

Japan . 48 parts In-Stock

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48

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Component Electronics Inc.

Canada . 1 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 1,472 parts In-Stock

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$5.997

100+ parts

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$5.757

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$5.757

1,472

$5.997

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$5.757

$5.757

Ampacity Inc.

Singapore . 1,251 parts In-Stock

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$11.000

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$11.000

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AZTECH Wire

Italy . 469 parts In-Stock

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$19.713

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469

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Continental Prestige Electronics

USA . 4,339 parts In-Stock

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4,339

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Corphita

USA . 1,316 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Microchip USA

USA . 467 parts In-Stock

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467

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Kepictronics

USA . 370 parts In-Stock

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370

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Argo Parts USA

USA . 325 parts In-Stock

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325

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Perfect Parts

USA . 20 parts In-Stock

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Overview

Experience superior performance and reliability with the N25Q128A13ESF40E by Micron Technology. As a leader in flash memory technology, Micron delivers top-quality products designed for industrial applications. This small outline package offers hardware and software write protection, ensuring data integrity. With a high endurance of 100,000 write/erase cycles, this NOR type memory device provides exceptional value and peace of mind. Upgrade your systems with Micron's N25Q128A13ESF40E for efficient and dependable operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and reliability to the product.

Surface Mount: YES

The surface mount feature allows for easy integration onto circuit boards, making installation quick and simple.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility with standard mounting configurations for widespread usability.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables efficient data transfer and synchronization within the system.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures optimal performance and compatibility with a wide range of applications.

Power Supplies (V): 3/3.3

The dual power supply options of 3V and 3.3V cater to different power requirements, offering flexibility in design.

No. of Terminals: 16

The 16 terminals provide sufficient connectivity options for seamless integration into various systems and devices.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact design solutions in constrained environments.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even under demanding conditions.

Organization: 128MX1

The organizational structure of 128MX1 delivers efficient memory organization and management for data storage purposes.

Technical Specifications

Flash Memory N25Q128A13ESF40E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13ESF40E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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