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EDB4432BBPA-1D-F-R

Micron Technology

EDB4432BBPA-1D-F-R by Micron Technology

Micron Technology's EDB4432BBPA-1D-F-R is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,412 parts In-Stock

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Digiode

USA . 2,052 parts In-Stock

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2,052

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Chip Stock

USA . 380 parts In-Stock

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380

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 1,021 parts In-Stock

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$15.290

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$15.290

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Ampacity Inc.

Singapore . 1,467 parts In-Stock

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$16.000

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Perfect Parts

USA . 199,360 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Microchip USA

USA . 3,826 parts In-Stock

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Corphita

USA . 771 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Kepictronics

USA . 255 parts In-Stock

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Overview

Unlock new levels of performance and efficiency with the Micron Technology EDB4432BBPA-1D-F-R. As a leader in DRAM technology, Micron delivers unparalleled quality and reliability in every product. Ideal for a wide range of applications, this LPDDR2 DRAM offers seamless operation in single bank page burst mode, ensuring optimal performance. With a nominal supply voltage of 1.2V and self-refresh capability, this memory module provides maximum energy efficiency without compromising on speed. Elevate your projects with Micron's cutting-edge technology and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package light and durable, which is ideal for electronic devices that may be moved around frequently.

Surface Mount: YES

Being surface mountable makes it easy to integrate into circuit boards, saving space and allowing for efficient assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a nominal supply voltage of 1.2V can help in reducing power consumption and heat generation, leading to improved energy efficiency.

No. of Terminals: 168

Having a higher number of terminals allows for more connectivity options and flexibility in system design.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with a wide range of systems, making it a popular choice for modern electronic devices.

Memory Density: 4294967296 bit

With a high memory density, this DRAM can store a large amount of data, making it suitable for applications that require handling of complex and extensive data sets.

Technical Specifications

DRAM EDB4432BBPA-1D-F-R attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

JESD-30 Code:

S-PBGA-B168

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

168

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Organization:

128MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.3 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Trade Compliance

EDB4432BBPA-1D-F-R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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