Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Integrated Silicon Solution's IS43TR81024BL-107MBL is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
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The plastic/epoxy material used in the package body makes the product lightweight and durable, ideal for portable devices.
Synchronous operation ensures that data is transferred at a consistent rate, increasing performance and reliability.
The low supply voltage of 1.35V helps in reducing power consumption, making it energy-efficient.
The high maximum operating temperature of 95°C allows the product to operate reliably even in challenging thermal conditions.
Having 78 terminals provides more connectivity options and flexibility in integrating the product into various systems.
The large number of words supported enhances the storage capacity and data processing capabilities of the product.
Being DDR3L DRAM, the product offers improved performance and efficiency compared to older memory technologies.
DRAM IS43TR81024BL-107MBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution
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IS43TR81024BL-107MBL Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Dc Components
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
LL4148
Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
Cheng-yi Electronic
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micropac Industries
STM32H753IIT6
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
Surge Components
K4D26323RA-GC2A
Samsung
Samsung's K4D26323RA-GC2A is a DDR1 DRAM with 4MX32 organization, operating at 350 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT41K128M16JT-125:KTR
Micron Technology
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT8KTF51264HZ-1G9P1
MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.
MT42L32M32D1HE-18AAT:D
Micron Technology's MT42L32M32D1HE-18AAT:D is a LPDDR2 DRAM with 32MX32 organization, operating at 533 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics or industrial devices.
MT8HTF12864HDZ-667H1
MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.
MT47H64M16HR-3AIT:H
Micron Technology's MT47H64M16HR-3AIT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. With AEC-Q100 screening level, it offers reliable performance in automotive electronics.
S70KS1282GABHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
MT40A256M16LY-075:F
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
KVR16LN11/4
Kingston Technology Company
Kingston's KVR16LN11/4 DDR DRAM module operates synchronously at 1.35V, with 512MX64 organization and 64-bit memory width. Ideal for applications requiring high memory density and multi-bank page burst access mode in microelectronic assemblies.
MT40A256M16GE-083E:B
Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT53E2G32D4NQ-046WT:A
Micron Technology's MT53E2G32D4NQ-046WT:A is a LPDDR4 DRAM with 2GX32 organization, 32-bit memory width, and 68719476736-bit memory density. It operates synchronously at temperatures ranging from -25°C to 85°C. Ideal for applications requiring high-speed and low-power memory solutions in compact form factors.
AS4C512M8D4-83BIN
Alliance Memory
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
IS43LR16800G-6BLI-TR
Integrated Silicon Solution
IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.
NT5CC256M16ER-EKA
Nanya Technology
NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
K4B1G1646G-BCH9
Samsung's K4B1G1646G-BCH9 DDR3 DRAM features 64MX16 organization, 667 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast memory access and data processing with a max standby current of 0.01 Amp.
MT40A2G16TBB-062E:F
Micron Technology's MT40A2G16TBB-062E:F is a DDR4 DRAM with 2GX16 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in thin-profile devices.
W9751G6NB25I
Winbond Electronics
Winbond Electronics' W9751G6NB25I is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
NT5CC128M16JR-EK
NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.
MT48LC4M16A2P-75:GTR
Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.
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IS43TR16256A-15HBLI
IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.
IS43TR16256BL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
IS43TR16256A-125KBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
IS43DR16640B-25DBLI
IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
IS43TR16256AL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
IS43TR16256B-125KBLI-TR
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256AL-125KBL
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;
IS43TR16256BL-107MBLI-TR
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Technology: CMOS;
IS43TR16512BL-125KBLI
IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
IS43QR16256B-083RBLI
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 375 mA;
IS43TR16256BL-107MBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
IS43TR16256BL-125KBL-TR
IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.
IS43QR16256B-083RBLI-TR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .058 Amp;
IS43LR32160C-6BLI
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43DR16320C-25DBLI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16512BL-125KBLI-TR
IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.
IS43TR16256BL-125KBL
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
IS43TR16128B-15HBLI
Supply Digital Components
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