Loading...

IS43QR16512A-075VBLI

Integrated Silicon Solution

IS43QR16512A-075VBLI by Integrated Silicon Solution

IS43QR16512A-075VBLI by Integrated Silicon Solution is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

$19.522

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$19.522

100+ parts

-

1k+ parts

-

10k+ parts

-

23

$19.522

-

-

-

Vyrian

USA . 4,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,656

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$8.237

100+ parts

-

1k+ parts

-

10k+ parts

-

568

$8.237

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$19.522

100+ parts

-

1k+ parts

$18.545

10k+ parts

$18.155

50

$19.522

-

$18.545

$18.155

Overview

Elevate your system's performance with the IS43QR16512A-075VBLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch quality DRAM products that are ideal for a variety of applications. With its advanced technology and reliable design, this DDR4 DRAM offers customers exceptional value, increased speed, and improved efficiency. Upgrade your device today with the IS43QR16512A-075VBLI and experience the benefits of superior memory performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring product longevity and affordability.

Surface Mount: YES

Easier integration into circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Efficient synchronization with system clock for optimized performance.

Nominal Supply Voltage / Vsup (V): 1.2

Optimal voltage level for stable and reliable operation.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Space-saving design with fine pitch for high-density memory solutions.

Maximum Clock Frequency (fCLK): 1333 MHz

High clock frequency for improved data transfer speeds and overall system performance.

Memory IC Type: DDR4 DRAM

Advanced DDR4 technology for faster data processing and multitasking capabilities.

Technical Specifications

DRAM IS43QR16512A-075VBLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.025 Amp

Maximum Supply Current:

375 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Trade Compliance

IS43QR16512A-075VBLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20