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IS43LD16640C-25BLI

Integrated Silicon Solution

IS43LD16640C-25BLI by Integrated Silicon Solution

IS43LD16640C-25BLI by Integrated Silicon Solution is a 64MX16 LPDDR2 DRAM with 1073741824 bit memory density. It operates synchronously at 1.2V, featuring self-refresh and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed and low-power memory solutions.

Median Price

$9.943

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 561 parts In-Stock

1+ parts

$9.943

100+ parts

$7.680

1k+ parts

$7.101

10k+ parts

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561

$9.943

$7.680

$7.101

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Arrow

USA . 48 parts In-Stock

1+ parts

$9.943

100+ parts

$7.679

1k+ parts

$7.101

10k+ parts

$6.816

48

$9.943

$7.679

$7.101

$6.816

Verical

USA . 48 parts In-Stock

1+ parts

$9.943

100+ parts

$7.679

1k+ parts

$7.101

10k+ parts

$6.816

48

$9.943

$7.679

$7.101

$6.816

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$7.509

100+ parts

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$7.509

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Chip Stock

USA . 9,300 parts In-Stock

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Vyrian

USA . 7,445 parts In-Stock

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NAC Semi

USA . 1,394 parts In-Stock

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$11.060

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$10.230

1,394

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$10.230

Sensible Micro Corp

USA . 212 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$7.359

100+ parts

-

1k+ parts

$7.064

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1,000

$7.359

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$7.064

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AZTECH Wire

Italy . 823 parts In-Stock

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$18.897

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823

$18.897

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Lixinc

USA . 9,180 parts In-Stock

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9,180

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GreenTree Electronics

Israel . 2,078 parts In-Stock

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Eastek

USA . 1,736 parts In-Stock

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$9.720

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Authorized Procurement Solutions

USA . 890 parts In-Stock

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890

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Perfect Parts

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Overview

Elevate your device's performance with the IS43LD16640C-25BLI by Integrated Silicon Solution. Known for their top-notch quality and reliability, ISS offers cutting-edge DRAM solutions that are perfect for a wide range of applications. This LPDDR2 DRAM memory module boasts a robust design, superior speed, and energy efficiency, making it an ideal choice for industrial-grade devices. Upgrade your system today and experience the seamless operation and enhanced capabilities that only ISS can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the DRAM, ensuring durability and reliability.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination with other components in the system.

Nominal Supply Voltage / Vsup (V): 1.2

Low power consumption at a moderate voltage level for efficient performance.

No. of Terminals: 134

Sufficient number of terminals for connectivity and data transfer in the system.

Maximum Operating Temperature: 85 °C

Wide temperature tolerance range suitable for various operating conditions.

Organization: 64MX16

Organized in a 64 meg x 16 configuration for high capacity memory storage.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand high reflow temperatures for soldering without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Memory Density: 1073741824 bit

High memory density for storing large amounts of data efficiently.

Technical Specifications

DRAM IS43LD16640C-25BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

JESD-30 Code:

R-PBGA-B134

JESD-609 Code:

e1

Length:

11.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

134

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.3 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10 mm

Trade Compliance

IS43LD16640C-25BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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