Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DDTD122JC-7-F
Diodes Incorporated
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT IN BIAS RESISTOR RATIO IS 21.36
.5 A
50 V
SINGLE WITH BUILT-IN RESISTOR
47
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.2 W
Not Qualified
BIP General Purpose Small Signal
YES
MATTE TIN
GULL WING
DUAL
30
SILICON
200 MHz
DDTD123EU-7-F
BUILT-IN BIAS RESISTOR RATIO 1
39
DDTD123YU-7-F
BUILT-IN BIAS RESISTOR RATIO 4.54
56
DDTD133HC-7-F
BUILT IN BIAS RESISTOR RATIO IS 3.03
DDTD143EC-7-F
BUILT IN BIAS RESISTOR RATIO IS 1
DDTD143EU-7-F
DDTD143TC-7-F
BUILT IN BIAS RESISTOR
40 V
100
DDTD143TU-7-F
BUILT-IN BIAS RESISTOR
MMBT2907A-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 100 ns;
.6 A
60 V
SINGLE
50
e0
PNP
TIN LEAD
SWITCHING
100 ns
45 ns
QSX2TR
ROHM
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;
5 A
30 V
270
R-PDSO-G6
e1
6
.5 W
Other Transistors
TIN SILVER COPPER
10
AMPLIFIER
2DB1714-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
COLLECTOR
2 A
R-PSSO-F3
2 W
FLAT
BC639-16ZL1G
Onsemi
BC639-16ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 80V and max. collector current of 1A. It has a min. DC current gain of 25 and operates up to 150°C, making it suitable for small signal applications requiring high power dissipation up to 0.8W in cylindrical package style.
1 A
80 V
25
TO-226
O-PBCY-T3
ROUND
CYLINDRICAL
.8 W
NO
THROUGH-HOLE
BOTTOM
PN2907AG
PN2907AG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 60V, such as amplifiers and signal processing circuits due to its high transition frequency of 200MHz.
TO-92
1.5 W
DDA122LU-7-F
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO 45.45
.1 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
2
DDTB122LC-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT-IN BIAS RESISTOR RATIO IS 45.45
DDTB122TC-7-F
DDTB142JC-7-F
BUILT-IN BIAS RESISTOR RATIO IS 21.28
DDTB142JU-7-F
BUILT-IN BIAS RESISTANCE RATIO IS 21.28
DDTB142TC-7-F
DDTC122LE-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
.15 W
DDTC122LU-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 45.45
DDTD122LC-7-F
DDTD122TC-7-F
DDTD142TC-7-F
MPS2907ARL1G
MPS2907ARL1G by Onsemi is a PNP BJT with max. power dissipation of 0.36W, hFE of 100, and max. operating temp of 150 °C. Ideal for applications requiring a small signal transistor with a collector-emitter voltage of 60V, such as amplifiers or switching circuits due to its high transition frequency of 200MHz.
.36 W
MPS2907ARLREG
MPS2907ARLREG by Onsemi is a PNP BJT with hFE of 100, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring fast switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: tin silver copper, and max operating temp: 150 °C make it versatile for various designs.
2N4403RLRMG
2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
255 ns
35 ns
BC237BRL1G
BC237BRL1G by Onsemi is a NPN BJT transistor with a max power dissipation of 0.35W and min DC current gain of 200, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, operating temperature up to 150°C, and nominal transition frequency of 200MHz in a cylindrical package.
EUROPEAN PART NUMBER
45 V
200
.35 W
BC237BZL1G
BC237BZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, ideal for amplifier applications. It has a min. DC current gain of 200 and max. operating temp of 150 °C, making it suitable for low-power circuits requiring high frequency response up to 200MHz. The package style is cylindrical with through-hole terminals, offering easy installation in various electronic devices.
BC373RL1G
BC373RL1G by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and can operate up to 150 °C, making it suitable for various electronic designs requiring high performance in a small package.
DARLINGTON
8000
TO-226AA
.625 W
BC637G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
40
Tin/Silver/Copper (Sn/Ag/Cu)
BC639RL1G
BC639RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1A. It has a min DC current gain of 40 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance.
MPSA28RLRPG
MPSA28RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 80V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits where precise switching and amplification are needed.
10000
MPSA29RLRPG
MPSA29RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 200MHz in a cylindrical package.
100 V
2N4403RLG
2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
BC182BG
BC182BG by Onsemi is a NPN BJT transistor with hFE of 180, ideal for amplifier applications. It has a max power dissipation of 0.35W and operates at up to 150 °C. With a max collector-emitter voltage of 50V and fT of 200MHz, it's suitable for various electronic designs.
180
BC237BG
BC237BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for amplifier applications. Featuring a min. DC current gain of 200 and nominal transition frequency of 200MHz, it comes in a cylindrical package with through-hole terminals for easy installation.
BC237CG
BC237CG by Onsemi is a NPN BJT transistor with hFE of 380, VCE of 45V, and fT of 200MHz. Ideal for amplifier applications due to its 0.35W power dissipation, it has a single configuration in a cylindrical package with through-hole terminals. Operating up to 150 °C, it is suitable for various electronic designs.
380
BC372G
BC372G by Onsemi is a NPN Darlington transistor with 3 terminals and a max power dissipation of 0.625W. With a min DC current gain of 8000, it operates at temperatures up to 150 °C. Ideal for applications requiring high collector current and transition frequency up to 200MHz in small signal circuits.
BC373G
BC373G by Onsemi is a NPN Darlington transistor with 8000 min DC current gain, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 1A of collector current. With a nominal transition frequency of 200MHz, it operates b/w -55 °C to 150°C effectively in various electronic circuits.
-55 Cel
BC447G
BC447G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor with hFE of at least 50, operating up to 150 °C, and featuring a nominal transition frequency of 200MHz.
.3 A
BC489G
BC489G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 15, and max. operating temp of 150 °C. Ideal for switching applications due to its max. collector-emitter voltage of 80V and max. collector current of 0.5A in a cylindrical package style suitable for through-hole mounting.
15
BC517RL1G
BC517RL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE max of 30V and IC max of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
30000
BC517ZL1G
BC517ZL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE of 30V and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
BC635RL1G
BC635RL1G by Onsemi is a NPN BJT with 45V VCEO, 1A IC, and 200MHz fT. Ideal for low-power applications, it comes in a cylindrical package with through-hole terminals. With a min hFE of 40 and max operating temp of 150 °C, it's suitable for various electronic designs.
BC635ZL1G
BC635ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 45V, max. collector current of 1A, and min. DC current gain of 40. It is used in applications requiring small signal amplification in electronic circuits due to its high transition frequency of 200MHz and max. power dissipation of 0.625W.
BC639G
BC639G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, such as amplifiers or signal processing circuits operating up to 150 °C.
BC639ZL1G
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