Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STD3PK50Z
STMicroelectronics
STD3PK50Z by STMicroelectronics is a P-CHANNEL FET for switching applications. It features a 500V DS breakdown voltage, 11.2A max pulsed drain current, and 4 ohm max drain-source resistance. With a small outline package style and operating temperature range of -55 to 150°C, it's ideal for power management in various electronic devices.
SINGLE WITH BUILT-IN DIODE
500 V
2.8 A
4 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
70 W
11.2 A
Other Transistors
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
STB5N62K3
STB5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W power dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
ULTRA LOW-ON RESISTANCE
120 mJ
620 V
4.2 A
1.6 ohm
TO-263AB
245
N-CHANNEL
16.8 A
FET General Purpose Power
MATTE TIN
STL8N65M5
STL8N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 5.6A IDM, and 0.6 ohm RDS(on). It's used for switching applications in enhancement mode, with 120mJ EAS rating.
ULTRA-LOW RESISTANCE
DRAIN
650 V
1.4 A
.6 ohm
2 pF
S-XQCC-N5
5
UNSPECIFIED
SQUARE
CHIP CARRIER
NOT SPECIFIED
5.6 A
NO LEAD
QUAD
STP10NM60ND
STP10NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 32A max pulsed drain current and 0.6 ohm max drain-source resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 70W at 150 °C.
130 mJ
600 V
8 A
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
32 A
NO
Matte Tin (Sn)
THROUGH-HOLE
STP5N62K3
STP5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and ENHANCEMENT MODE operation at up to 150 °C.
STP6N52K3
STP6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 20A IDM, and 1.2 ohm RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and 110mJ EAS ratings in ENHANCEMENT MODE operation.
110 mJ
525 V
5 A
1.2 ohm
20 A
ATP301-TL-H
Onsemi
The Onsemi ATP301-TL-H is a P-CHANNEL FET with 100V DS breakdown voltage, 112A IDM, and 0.075 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for surface mount designs due to its small outline package style.
54 mJ
100 V
28 A
.075 ohm
e6
112 A
TIN BISMUTH
STP20NE06L
STP20NE06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 100mJ EAS, and 0.085 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 70W at 175 °C.
100 mJ
60 V
.085 ohm
175 Cel
80 A
Not Qualified
STB4N62K3
STB4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 15.2A IDM, and 70W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C, featuring a built-in DIODE and GULL WING terminals.
3.8 A
1.95 ohm
15.2 A
STI4N62K3
STI4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 70W power dissipation, operating in enhancement mode at up to 150 °C.
TO-262AA
R-PSIP-T3
IN-LINE
STL12N65M5
STL12N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 150mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE at up to 150 °C.
150 mJ
8.5 A
1.8 A
.43 ohm
S-PSSO-N4
4
7.2 A
STP4N62K3
STP4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 70W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
STSJ25NF3LL
STMicroelectronics' STSJ25NF3LL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 100A IDM and 0.013 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
30 V
12 A
.013 ohm
R-PDSO-G8
e4
8
100 A
NICKEL PALLADIUM GOLD
DUAL
STSJ100NHS3LL
STSJ100NHS3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
1800 mJ
.0057 ohm
STD9NM50N-1
STD9NM50N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
7.5 A
.56 ohm
TO-251
30 A
STP9NM50N
STP9NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 30A pulsed drain current. It operates in enhancement mode with a max power dissipation of 70W. Its compact design suits various electronic circuits.
STL6NM60N
STL6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 23A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
65 mJ
5.7 A
1 A
.92 ohm
S-XQCC-N12
12
23 A
STP2NK100Z
STP2NK100Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 1000V breakdown voltage and a max drain current of 2A. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor ensures efficient performance in various electronic circuits.
AVALANCHE ENERGY RATED
170 mJ
1000 V
2 A
1.85 A
8.5 ohm
9 pF
7.4 A
74 ns
13.7 ns
STD85N3LH5
STD85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
165 mJ
.0065 ohm
320 A
STD8NM60N-1
STD8NM60N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
200 mJ
7 A
.65 ohm
TO-251AA
STD8NM60N
STD8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
STP8NM60N
STP8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient power management in various electronic circuits.
STU85N3LH5
STU85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0071 Ω).
.0071 ohm
STU95N2LH5
STU95N2LH5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
25 V
.007 ohm
STP85N3LH5
STP85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STD5NK50Z-1
STD5NK50Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 4.4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
4.4 A
1.5 ohm
17.6 A
STP5NK50Z
STP5NK50Z by STMicroelectronics is a N-CHANNEL power FET with 500V DS breakdown voltage. It has a max pulsed drain current of 17.6A and an avalanche energy rating of 130mJ. This transistor is commonly used for switching applications.
STD30PF03L-1
STD30PF03L-1 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
850 mJ
24 A
.04 ohm
96 A
STD30PF03LT4
STD30PF03LT4 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in surface mount designs.
TO-252AA
STSJ100NH3LL
STSJ100NH3LL by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
22 A
.005 ohm
400 A
STB4NK60Z-1
STB4NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 16A IDM, and 2 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 70W.
4 A
2 ohm
16 A
STP45NF3LL
STP45NF3LL by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 45 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.02 Ω. Designed for high efficiency, it supports up to 180 A pulsed current.
241 mJ
45 A
.02 ohm
180 A
STD95N3LLH6
STD95N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
STD60NH03LT4
STD60NH03LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
LOW THRESHOLD
300 mJ
60 A
.017 ohm
240 A
STD70NH02LT4
STD70NH02LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs.
360 mJ
24 V
.008 ohm
STP36NF06L
STP36NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A IDM, and 0.05 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 70W.
225 mJ
.05 ohm
120 A
STP36NF06
STP36NF06 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 30 A and a breakdown voltage of 60 V. It operates in enhancement mode with a low on-resistance of 0.04 Ω. This robust transistor supports high power dissipation up to 70 W.
STB5NK50Z-1
STB5NK50Z-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 17.6A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor is suitable for various electronic circuits.
STD8NM60ND
STD8NM60ND by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
.7 ohm
STP8NM60ND
STP8NM60ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STB5NK50ZT4
STB5NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STB16PF06LT4
STB16PF06LT4 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 16 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for compact power management in surface mount designs.
250 mJ
.165 ohm
64 A
STB5NK52ZD-1
STB5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 520V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
520 V
STD5NK52ZD-1
STD5NK52ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STD5NK52ZD
STD5NK52ZD by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STD90N02L-1
STD90N02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.006 Ω).
.006 ohm
STD90N02L
STD90N02L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
STB95N3LLH6
STB95N3LLH6 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
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